Run-to-run control of inductively coupled C2F6 plasma etching of SiO2: Construction of a numerical process with a computational fluid dynamics code

Seung Taek Seo; Yong Hee Lee; Kwang Soon Lee; Bum Kyoo Choi; Dae Rook Yang

doi:10.1007/BF02705660

Run-to-run control of inductively coupled C₂F₆ plasma etching of SiO₂: Construction of a numerical process with a computational fluid dynamics code

Seung Taek Seo, Yong Hee Lee, Kwang Soon Lee, Bum Kyoo Choi, Dae Rook Yang

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A numerical process to simulate SiO₂ dry etching with inductively coupled C₂F₆ plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C₂F₆ plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

Original language	English
Pages (from-to)	822-829
Number of pages	8
Journal	Korean Journal of Chemical Engineering
Volume	22
Issue number	6
DOIs	https://doi.org/10.1007/BF02705660
Publication status	Published - 2005 Nov

Keywords

CF Plasmas
ICP Etcher
Run-to-Run Control
SiO Etching

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)

Access to Document

10.1007/BF02705660

Cite this

@article{78f97a34e7b440bc903b89d1fe9a0737,

title = "Run-to-run control of inductively coupled C2F6 plasma etching of SiO2: Construction of a numerical process with a computational fluid dynamics code",

abstract = "A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.",

keywords = "CF Plasmas, ICP Etcher, Run-to-Run Control, SiO Etching",

author = "Seo, {Seung Taek} and Lee, {Yong Hee} and Lee, {Kwang Soon} and Choi, {Bum Kyoo} and Yang, {Dae Rook}",

note = "Funding Information: This work was supported by grant No. R01-2002-000-00574-0 from the Basic Research Program of the Korea Science & Engineering Foundation.",

year = "2005",

month = nov,

doi = "10.1007/BF02705660",

language = "English",

volume = "22",

pages = "822--829",

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TY - JOUR

T1 - Run-to-run control of inductively coupled C2F6 plasma etching of SiO2

T2 - Construction of a numerical process with a computational fluid dynamics code

AU - Seo, Seung Taek

AU - Lee, Yong Hee

AU - Lee, Kwang Soon

AU - Choi, Bum Kyoo

AU - Yang, Dae Rook

N1 - Funding Information: This work was supported by grant No. R01-2002-000-00574-0 from the Basic Research Program of the Korea Science & Engineering Foundation.

PY - 2005/11

Y1 - 2005/11

N2 - A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

AB - A numerical process to simulate SiO2 dry etching with inductively coupled C2F6 plasmas has been constructed using a commercial CFD code as a first step to design a run-to-run control system. The simulator was found to reasonably predict the reactive ion etching behavior of C2F6 plasmas and used to investigate the effects of plasma operating variables on the etch rate and uniformity. The relationship between the operating variables and the etching characteristics was mathematically modeled through linear regression for future run-to-run control system design.

KW - CF Plasmas

KW - ICP Etcher

KW - Run-to-Run Control

KW - SiO Etching

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JO - Korean Journal of Chemical Engineering

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