Run-to-run control of inductively coupled C₂F₆ plasma etching of SiO₂: Multivariable controller design and numerical application

Keyphrases

• Silica 100%
• Controller 100%
• Plasma Etching 100%
• Inductively Coupled 100%
• C2F6 100%
• Run-to-run Control 100%
• Design Application 100%
• Multivariable Controller Design 100%
• Numerical Application 100%
• Oxides 50%
• Numerical Simulation 50%
• Bias Voltage 50%
• RF Power 50%
• Control Method 50%
• Etching Rate 50%
• SiO2 Film 50%
• Inductively Coupled Plasma 50%
• Control Error 50%
• Etching Uniformity 50%
• Numerical Processes 50%
• Cost Control 50%
• RF Bias 50%
• Quadratic Cost 50%
• Integral Action 50%
• Plasma Etcher 50%
• Chamber Pressure 50%

Engineering

• Bias Voltage 100%
• Etch Rate 100%
• Inductively Coupled Plasma 100%
• Controller Design 100%
• Set Point 100%
• Numerical Application 100%
• Quadratic Cost 100%
• Multivariable Controller 100%
• Chamber Pressure 100%
• Computer Simulation 100%
• Silicon Dioxide 100%

Chemical Engineering

• Film 100%