Sb 2S 3-sensitized photoelectrochemical cells: Open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer

Jin Hyuck Heo; Sang Hyuk Im; Hi Jung Kim; Pablo P. Boix; Suk Joong Lee; Sang Il Seok; Iván Mora-Seró; Juan Bisquert

doi:10.1021/jp305150s

Sb ₂S ₃-sensitized photoelectrochemical cells: Open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer

Jin Hyuck Heo, Sang Hyuk Im, Hi Jung Kim, Pablo P. Boix, Suk Joong Lee, Sang Il Seok, Iván Mora-Seró, Juan Bisquert

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The Sb ₂S ₃-sensitized photoelectrochemical cells (Sb ₂S ₃-SPECs) in cobalt electrolyte were fabricated by depositing Sb ₂S ₃ on the macroporous TiO ₂ nanorods electrodes and consecutively spin-coating P3HT (Poly-3-hexylthiophene) interlayer to relieve the mass transport problem at vicinity of Sb ₂S ₃ and cobalt redox couples and reduce the backward recombination. Through the introduction of P3HT interlayer, we could greatly enhance the power conversion efficiency of Sb ₂S ₃-SPEC to 4.2% at 1 sun illumination, whereas the Sb ₂S ₃-SPEC without P3HT interlayer exhibits 3.2% of device efficiency. The electrochemical impedance analysis let us know that the improved device performance was mainly attributed to the reduced backward recombination building up the higher open circuit voltage.

Original language	English
Pages (from-to)	20717-20721
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	39
DOIs	https://doi.org/10.1021/jp305150s
Publication status	Published - 2012 Oct 4

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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title = "Sb 2S 3-sensitized photoelectrochemical cells: Open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer",

abstract = "The Sb 2S 3-sensitized photoelectrochemical cells (Sb 2S 3-SPECs) in cobalt electrolyte were fabricated by depositing Sb 2S 3 on the macroporous TiO 2 nanorods electrodes and consecutively spin-coating P3HT (Poly-3-hexylthiophene) interlayer to relieve the mass transport problem at vicinity of Sb 2S 3 and cobalt redox couples and reduce the backward recombination. Through the introduction of P3HT interlayer, we could greatly enhance the power conversion efficiency of Sb 2S 3-SPEC to 4.2% at 1 sun illumination, whereas the Sb 2S 3-SPEC without P3HT interlayer exhibits 3.2% of device efficiency. The electrochemical impedance analysis let us know that the improved device performance was mainly attributed to the reduced backward recombination building up the higher open circuit voltage.",

author = "Heo, {Jin Hyuck} and Im, {Sang Hyuk} and Kim, {Hi Jung} and Boix, {Pablo P.} and Lee, {Suk Joong} and Seok, {Sang Il} and Iv{\'a}n Mora-Ser{\'o} and Juan Bisquert",

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doi = "10.1021/jp305150s",

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T2 - Open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer

AU - Heo, Jin Hyuck

AU - Im, Sang Hyuk

AU - Kim, Hi Jung

AU - Boix, Pablo P.

AU - Lee, Suk Joong

AU - Seok, Sang Il

AU - Mora-Seró, Iván

AU - Bisquert, Juan

PY - 2012/10/4

Y1 - 2012/10/4

N2 - The Sb 2S 3-sensitized photoelectrochemical cells (Sb 2S 3-SPECs) in cobalt electrolyte were fabricated by depositing Sb 2S 3 on the macroporous TiO 2 nanorods electrodes and consecutively spin-coating P3HT (Poly-3-hexylthiophene) interlayer to relieve the mass transport problem at vicinity of Sb 2S 3 and cobalt redox couples and reduce the backward recombination. Through the introduction of P3HT interlayer, we could greatly enhance the power conversion efficiency of Sb 2S 3-SPEC to 4.2% at 1 sun illumination, whereas the Sb 2S 3-SPEC without P3HT interlayer exhibits 3.2% of device efficiency. The electrochemical impedance analysis let us know that the improved device performance was mainly attributed to the reduced backward recombination building up the higher open circuit voltage.

AB - The Sb 2S 3-sensitized photoelectrochemical cells (Sb 2S 3-SPECs) in cobalt electrolyte were fabricated by depositing Sb 2S 3 on the macroporous TiO 2 nanorods electrodes and consecutively spin-coating P3HT (Poly-3-hexylthiophene) interlayer to relieve the mass transport problem at vicinity of Sb 2S 3 and cobalt redox couples and reduce the backward recombination. Through the introduction of P3HT interlayer, we could greatly enhance the power conversion efficiency of Sb 2S 3-SPEC to 4.2% at 1 sun illumination, whereas the Sb 2S 3-SPEC without P3HT interlayer exhibits 3.2% of device efficiency. The electrochemical impedance analysis let us know that the improved device performance was mainly attributed to the reduced backward recombination building up the higher open circuit voltage.

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Sb ₂S ₃-sensitized photoelectrochemical cells: Open circuit voltage enhancement through the introduction of poly-3-hexylthiophene interlayer

Abstract

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