Scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO₂/Si substrate: Thermal conductivity of the wafers

The authors report scalable growth of free-standing graphene wafers with copper(Cu) catalyst on SiO₂/Si substrate at low temperature and investigation of their thermal conductivity. The Cu is the most common and the cheapest catalyst among electronic materials. Our process for producing the graphene with the Cu is based on a low-pressure, fast-heating chemical vapor deposition method. Thermal conductivity measurements with nondestructive Raman spectroscopy showed that the free-standing-graphene is a good thermal conductor. The possibility of growing graphene wafer at low temperatures by using a Cu thin film should accelerate research and facilitate the development of graphene for practical applications