Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

Seongpil Chang; Ki Young Dong; Jung Ho Park; Tae Yeon Oh; Jong Woo Kim; Sang Yeol Lee; Byeong Kwon Ju

doi:10.1063/1.3454775

Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

Seongpil Chang, Ki Young Dong, Jung Ho Park, Tae Yeon Oh, Jong Woo Kim, Sang Yeol Lee, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone (PES) substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO₂ as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 cm² /V s, 19.7 V, and 7.62× 10 ⁴, respectively.

Original language	English
Article number	243504
Journal	Applied Physics Letters
Volume	96
Issue number	24
DOIs	https://doi.org/10.1063/1.3454775
Publication status	Published - 2010 Jun 14

Bibliographical note

Funding Information:
This work was supported by the IT R&D program of MKE/KEIT (K1002182, TFT backplane technology for next generation display), the world class university (WCU, R32-2008-000-10082-0) project of the ministry of education, science and technology (Korea Science and Engineering Foundation), and the Industrial-Educational Cooperation Program between Korea University and LG Display.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3454775

Cite this

Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration. / Chang, Seongpil; Dong, Ki Young; Park, Jung Ho et al.
In: Applied Physics Letters, Vol. 96, No. 24, 243504, 14.06.2010.

Research output: Contribution to journal › Article › peer-review

@article{91bbd39fd2d741e0aabb8254cba862ed,

title = "Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration",

abstract = "We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone (PES) substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO2 as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 cm2 /V s, 19.7 V, and 7.62× 10 4, respectively.",

author = "Seongpil Chang and Dong, {Ki Young} and Park, {Jung Ho} and Oh, {Tae Yeon} and Kim, {Jong Woo} and Lee, {Sang Yeol} and Ju, {Byeong Kwon}",

note = "Funding Information: This work was supported by the IT R&D program of MKE/KEIT (K1002182, TFT backplane technology for next generation display), the world class university (WCU, R32-2008-000-10082-0) project of the ministry of education, science and technology (Korea Science and Engineering Foundation), and the Industrial-Educational Cooperation Program between Korea University and LG Display.",

year = "2010",

month = jun,

day = "14",

doi = "10.1063/1.3454775",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

AU - Chang, Seongpil

AU - Dong, Ki Young

AU - Park, Jung Ho

AU - Oh, Tae Yeon

AU - Kim, Jong Woo

AU - Lee, Sang Yeol

AU - Ju, Byeong Kwon

N1 - Funding Information: This work was supported by the IT R&D program of MKE/KEIT (K1002182, TFT backplane technology for next generation display), the world class university (WCU, R32-2008-000-10082-0) project of the ministry of education, science and technology (Korea Science and Engineering Foundation), and the Industrial-Educational Cooperation Program between Korea University and LG Display.

PY - 2010/6/14

Y1 - 2010/6/14

N2 - We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone (PES) substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO2 as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 cm2 /V s, 19.7 V, and 7.62× 10 4, respectively.

AB - We have investigated the parylene-groups for the device scaling-down as the protection layer of polyethersulfone (PES) substrate. In general, photolithography process on the PES substrate could not be allowed due to its poor chemical resistance. In this work, parylene-C is used as the protection layer. However, adhesion problem is observed caused by the hydrophobic property of parylene-groups. Thereby we additionally used SiO2 as the adhesion layer. Finally, we demonstrated the scaling-down of amorphous indium gallium zinc oxide thin film transistor on a plastic substrate by using lithography technique. Field-effect mobility, threshold voltage, current on-to-off ratio are measured to be 0.84 cm2 /V s, 19.7 V, and 7.62× 10 4, respectively.

UR - http://www.scopus.com/inward/record.url?scp=77953747008&partnerID=8YFLogxK

U2 - 10.1063/1.3454775

DO - 10.1063/1.3454775

M3 - Article

AN - SCOPUS:77953747008

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243504

ER -

Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this