Scanning tunneling microscope study of Sb/Si(111)-5 3√×5√ structure

Kang Ho Park; Jeong Sook Ha; Wan Soo Yun; El Hang Lee; Jae Yel Yi; Seong Ju Park

doi:10.1116/1.580634

Scanning tunneling microscope study of Sb/Si(111)-5 3√×5√ structure

Kang Ho Park, Jeong Sook Ha, Wan Soo Yun, El Hang Lee, Jae Yel Yi, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated Sb overlayer structures on Si(111) with low energy electron diffraction and scanning tunneling microscope (STM). The Sb/Si(111)-53√× structure was constructed via the desorption of Sb from the saturated 2×1 surface at elevated temperature (700-750 "C). Its atomic structure and formation process were extensively studied with STM images, considering the structural stability. This Sb structure could be described in terms of the site selective replacement of outermost Si atoms with Sb atoms in the dimer-adatom-stacking fault 5×5 structure, which is generated by both the saturation of dangling bonds and strain due to the large lattice mismatch.

Original language	English
Pages (from-to)	1572-1575
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	15
Issue number	3
DOIs	https://doi.org/10.1116/1.580634
Publication status	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Scanning tunneling microscope study of Sb/Si(111)-5 3√×5√ structure",

abstract = "We have investigated Sb overlayer structures on Si(111) with low energy electron diffraction and scanning tunneling microscope (STM). The Sb/Si(111)-53√× structure was constructed via the desorption of Sb from the saturated 2×1 surface at elevated temperature (700-750 {"}C). Its atomic structure and formation process were extensively studied with STM images, considering the structural stability. This Sb structure could be described in terms of the site selective replacement of outermost Si atoms with Sb atoms in the dimer-adatom-stacking fault 5×5 structure, which is generated by both the saturation of dangling bonds and strain due to the large lattice mismatch.",

author = "Park, {Kang Ho} and Ha, {Jeong Sook} and Yun, {Wan Soo} and Lee, {El Hang} and Yi, {Jae Yel} and Park, {Seong Ju}",

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doi = "10.1116/1.580634",

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T1 - Scanning tunneling microscope study of Sb/Si(111)-5 3√×5√ structure

AU - Park, Kang Ho

AU - Ha, Jeong Sook

AU - Yun, Wan Soo

AU - Lee, El Hang

AU - Yi, Jae Yel

AU - Park, Seong Ju

PY - 1997

Y1 - 1997

N2 - We have investigated Sb overlayer structures on Si(111) with low energy electron diffraction and scanning tunneling microscope (STM). The Sb/Si(111)-53√× structure was constructed via the desorption of Sb from the saturated 2×1 surface at elevated temperature (700-750 "C). Its atomic structure and formation process were extensively studied with STM images, considering the structural stability. This Sb structure could be described in terms of the site selective replacement of outermost Si atoms with Sb atoms in the dimer-adatom-stacking fault 5×5 structure, which is generated by both the saturation of dangling bonds and strain due to the large lattice mismatch.

AB - We have investigated Sb overlayer structures on Si(111) with low energy electron diffraction and scanning tunneling microscope (STM). The Sb/Si(111)-53√× structure was constructed via the desorption of Sb from the saturated 2×1 surface at elevated temperature (700-750 "C). Its atomic structure and formation process were extensively studied with STM images, considering the structural stability. This Sb structure could be described in terms of the site selective replacement of outermost Si atoms with Sb atoms in the dimer-adatom-stacking fault 5×5 structure, which is generated by both the saturation of dangling bonds and strain due to the large lattice mismatch.

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Scanning tunneling microscope study of Sb/Si(111)-5 3√×5√ structure

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