Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering

I. H. Kim; J. H. Ko; D. Kim; K. S. Lee; T. S. Lee; J. h. Jeong; B. Cheong; Y. J. Baik; W. M. Kim

doi:10.1016/j.tsf.2006.07.020

Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering

I. H. Kim, J. H. Ko, D. Kim, K. S. Lee, T. S. Lee, J. h. Jeong, B. Cheong, Y. J. Baik, W. M. Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

Undoped SnO_2-x thin films with amorphous phase were prepared at room temperature by radio frequency magnetron sputtering, and the changes in electrical, optical and structural properties were investigated upon annealing in atmosphere. The amorphous SnO_2-x film had the minimum resistivity of 1.5 × 10^{- 3} Ω cm and the highest Hall mobility of 22 cm²/V s, which were comparable to those observed in polycrystalline doped SnO₂ films. Examination of the temperature dependent Hall mobility revealed the grain boundary scattering as the dominant scattering mechanism for the crystallized SnO_2-x films. Analysis made by using four coefficients instrument showed that undoped SnO_2-x films had the characteristics of degenerate semiconductor with non-parabolic band structure, and that ionized impurity scattering with free electron screening was dominant mobility limiting mechanism in amorphous SnO_2-x films.

Original language	English
Pages (from-to)	2475-2480
Number of pages	6
Journal	Thin Solid Films
Volume	515
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2006.07.020
Publication status	Published - 2006 Dec 5

Keywords

Hall mobility
Scattering mechanisms
Sputtering
Tin oxide
Transparent conducting oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2006.07.020

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title = "Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering",

abstract = "Undoped SnO2-x thin films with amorphous phase were prepared at room temperature by radio frequency magnetron sputtering, and the changes in electrical, optical and structural properties were investigated upon annealing in atmosphere. The amorphous SnO2-x film had the minimum resistivity of 1.5 × 10- 3 Ω cm and the highest Hall mobility of 22 cm2/V s, which were comparable to those observed in polycrystalline doped SnO2 films. Examination of the temperature dependent Hall mobility revealed the grain boundary scattering as the dominant scattering mechanism for the crystallized SnO2-x films. Analysis made by using four coefficients instrument showed that undoped SnO2-x films had the characteristics of degenerate semiconductor with non-parabolic band structure, and that ionized impurity scattering with free electron screening was dominant mobility limiting mechanism in amorphous SnO2-x films.",

keywords = "Hall mobility, Scattering mechanisms, Sputtering, Tin oxide, Transparent conducting oxide",

author = "Kim, {I. H.} and Ko, {J. H.} and D. Kim and Lee, {K. S.} and Lee, {T. S.} and Jeong, {J. h.} and B. Cheong and Baik, {Y. J.} and Kim, {W. M.}",

year = "2006",

month = dec,

day = "5",

doi = "10.1016/j.tsf.2006.07.020",

language = "English",

volume = "515",

pages = "2475--2480",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering

AU - Kim, I. H.

AU - Ko, J. H.

AU - Kim, D.

AU - Lee, K. S.

AU - Lee, T. S.

AU - Jeong, J. h.

AU - Cheong, B.

AU - Baik, Y. J.

AU - Kim, W. M.

PY - 2006/12/5

Y1 - 2006/12/5

N2 - Undoped SnO2-x thin films with amorphous phase were prepared at room temperature by radio frequency magnetron sputtering, and the changes in electrical, optical and structural properties were investigated upon annealing in atmosphere. The amorphous SnO2-x film had the minimum resistivity of 1.5 × 10- 3 Ω cm and the highest Hall mobility of 22 cm2/V s, which were comparable to those observed in polycrystalline doped SnO2 films. Examination of the temperature dependent Hall mobility revealed the grain boundary scattering as the dominant scattering mechanism for the crystallized SnO2-x films. Analysis made by using four coefficients instrument showed that undoped SnO2-x films had the characteristics of degenerate semiconductor with non-parabolic band structure, and that ionized impurity scattering with free electron screening was dominant mobility limiting mechanism in amorphous SnO2-x films.

AB - Undoped SnO2-x thin films with amorphous phase were prepared at room temperature by radio frequency magnetron sputtering, and the changes in electrical, optical and structural properties were investigated upon annealing in atmosphere. The amorphous SnO2-x film had the minimum resistivity of 1.5 × 10- 3 Ω cm and the highest Hall mobility of 22 cm2/V s, which were comparable to those observed in polycrystalline doped SnO2 films. Examination of the temperature dependent Hall mobility revealed the grain boundary scattering as the dominant scattering mechanism for the crystallized SnO2-x films. Analysis made by using four coefficients instrument showed that undoped SnO2-x films had the characteristics of degenerate semiconductor with non-parabolic band structure, and that ionized impurity scattering with free electron screening was dominant mobility limiting mechanism in amorphous SnO2-x films.

KW - Hall mobility

KW - Scattering mechanisms

KW - Sputtering

KW - Tin oxide

KW - Transparent conducting oxide

UR - http://www.scopus.com/inward/record.url?scp=33750817358&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.07.020

DO - 10.1016/j.tsf.2006.07.020

M3 - Article

AN - SCOPUS:33750817358

SN - 0040-6090

VL - 515

SP - 2475

EP - 2480

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -

Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

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