Schottky barrier characteristics of Pt contacts to n -type InGaN

Research output: Contribution to journalArticlepeer-review

67 Citations (Scopus)


Schottky barrier behaviors of Pt contacts to n-InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) methods. It is found that the Schottky barrier heights (SBHs) determined by thermionic emission (TE) and thermionic field emission (TFE) modes using the I-V data are quite different from each other. However, the SBHs obtained by the TFE mode are fairly similar to theoretically calculated values, which are in good agreement with the results obtained by the C-V method. It is also shown that the SBHs and the ideality factors calculated by the TE and TFE modes decrease with increasing annealing temperature. The different SBHs obtained by the TE and TFE modes, the annealing temperature dependence of the SBHs, and the ideality factors are described and discussed in terms of the presence of different types of native point defects near the InGaN surface.

Original languageEnglish
Article number073704
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2006 Apr

Bibliographical note

Funding Information:
This work was supported by a Korea University grant.

Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Schottky barrier characteristics of Pt contacts to n -type InGaN'. Together they form a unique fingerprint.

Cite this