Schottky contacted nanowire field-effect sensing device with intrinsic amplification

Kyeong Sik Shin; Kyunghoon Lee; Jung Ho Park; Ji Yoon Kang; Chi On Chui

doi:10.1109/LED.2010.2070833

Schottky contacted nanowire field-effect sensing device with intrinsic amplification

Kyeong Sik Shin, Kyunghoon Lee, Jung Ho Park, Ji Yoon Kang, Chi On Chui

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

Original language	English
Article number	5594616
Pages (from-to)	1317-1319
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2070833
Publication status	Published - 2010 Nov

Keywords

Biosensor
Schottky contact
field-effect device
nanowire
photodetector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2070833

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title = "Schottky contacted nanowire field-effect sensing device with intrinsic amplification",

abstract = "In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.",

keywords = "Biosensor, Schottky contact, field-effect device, nanowire, photodetector",

author = "Shin, {Kyeong Sik} and Kyunghoon Lee and Park, {Jung Ho} and Kang, {Ji Yoon} and Chui, {Chi On}",

note = "Funding Information: Manuscript received July 27, 2010; revised August 9, 2010; accepted August 16, 2010. Date of publication October 4, 2010; date of current version October 22, 2010. This work was supported in part by the Pioneer Research Program for Converging Technology and in part by the Korea Research Foundation Grant (KRF -2007-355-D00016/KRF-200-357-D00162) funded by the Korean Government and the Focus Center Research Program-Focus Center on Functional Engineered Nano Architectonics program. The review of this letter was arranged by Editor X. Zhou.",

year = "2010",

month = nov,

doi = "10.1109/LED.2010.2070833",

language = "English",

volume = "31",

pages = "1317--1319",

journal = "IEEE Electron Device Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Shin, Kyeong Sik

AU - Lee, Kyunghoon

AU - Park, Jung Ho

AU - Kang, Ji Yoon

AU - Chui, Chi On

N1 - Funding Information: Manuscript received July 27, 2010; revised August 9, 2010; accepted August 16, 2010. Date of publication October 4, 2010; date of current version October 22, 2010. This work was supported in part by the Pioneer Research Program for Converging Technology and in part by the Korea Research Foundation Grant (KRF -2007-355-D00016/KRF-200-357-D00162) funded by the Korean Government and the Focus Center Research Program-Focus Center on Functional Engineered Nano Architectonics program. The review of this letter was arranged by Editor X. Zhou.

PY - 2010/11

Y1 - 2010/11

N2 - In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

AB - In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

KW - Biosensor

KW - Schottky contact

KW - field-effect device

KW - nanowire

KW - photodetector

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U2 - 10.1109/LED.2010.2070833

DO - 10.1109/LED.2010.2070833

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SN - 0741-3106

VL - 31

SP - 1317

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 5594616

ER -

Schottky contacted nanowire field-effect sensing device with intrinsic amplification

Abstract

Keywords

ASJC Scopus subject areas

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