Schottky contacted nanowire field-effect sensing device with intrinsic amplification

Kyeong Sik Shin, Kyunghoon Lee, Jung Ho Park, Ji Yoon Kang, Chi On Chui

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


In this letter, we present a novel semiconductor nanowire field-effect transistor-based sensing device with an intrinsic amplification mechanism. In this novel device, a nanowire field-effect transistor is integrated with an orthogonal sensing nanowire that amplifies any detected signal. The device operating and intrinsic amplification mechanism has been proposed and experimentally validated. Fabricated exclusively using the topdown processes, the novel device prototypes have demonstrated an appreciable improvement in photodetection against the cofabricated generic nanowire field-effect transistor sensors.

Original languageEnglish
Article number5594616
Pages (from-to)1317-1319
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2010 Nov


  • Biosensor
  • Schottky contact
  • field-effect device
  • nanowire
  • photodetector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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