Schottky diodes based on a single GaN nanowire

Jae Ryoung Kim, Hwangyou Oh, Hye Mi So, Ju Jin Kim, Jinhee Kim, Cheol Jin Lee, Seung Chul Lyu

Research output: Contribution to journalArticlepeer-review

88 Citations (Scopus)


On a single GaN nanowire, obtained by chemical vapour deposition, several Schottky-junction diodes were fabricated and their electrical transport properties were studied. Alternately attached metal electrodes of Al and Ti/Au formed a Schottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting in several diodes on a single nanowire. The current-voltage measurements exhibited clear rectifying behaviour and no reverse-bias breakdown was observed up to the measured voltage, -5 V. The forward-bias threshold voltage was observed to decrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.

Original languageEnglish
Pages (from-to)701-704
Number of pages4
Issue number5
Publication statusPublished - 2002 Oct
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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