Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Patrick Kung; Danielle Walker; Peter Sandvik; Melissa Hamilton; Jacqueline Diaz; In Hwan Lee; Manijeh Razeghi

doi:10.1117/12.344586

Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Patrick Kung, Danielle Walker, Peter Sandvik, Melissa Hamilton, Jacqueline Diaz, In Hwan Lee, Manijeh Razeghi

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

We report the growth and character on of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiO_x mask stripes.

Original language	English
Pages (from-to)	223-229
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3629
DOIs	https://doi.org/10.1117/12.344586
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA Duration: 1999 Jan 27 → 1999 Jan 29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth",

abstract = "We report the growth and character on of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiOx mask stripes.",

author = "Patrick Kung and Danielle Walker and Peter Sandvik and Melissa Hamilton and Jacqueline Diaz and Lee, {In Hwan} and Manijeh Razeghi",

year = "1999",

doi = "10.1117/12.344586",

language = "English",

volume = "3629",

pages = "223--229",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Photodetectors: Materials and Devices IV ; Conference date: 27-01-1999 Through 29-01-1999",

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T1 - Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

AU - Kung, Patrick

AU - Walker, Danielle

AU - Sandvik, Peter

AU - Hamilton, Melissa

AU - Diaz, Jacqueline

AU - Lee, In Hwan

AU - Razeghi, Manijeh

PY - 1999

Y1 - 1999

N2 - We report the growth and character on of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiOx mask stripes.

AB - We report the growth and character on of Schottky based metal-semiconductor-metal ultraviolet photodetectors fabricated on lateral epitaxially overgrown GaN films. The lateral epitaxial overgrowth of GaN was carried out on basal plane sapphire substrates by low pressure metalorganic chemical vapor deposition and exhibited lateral growth rates more than 5 times as high as vertical growth rates. The spectral responsivity, the dependence on bias voltage, on incident optical power, and the time response of these photodetectors have been characterized. Two detector orientations were investigated: one with the interdigitated finger pattern parallel and the other perpendicular to the underlying SiOx mask stripes.

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U2 - 10.1117/12.344586

DO - 10.1117/12.344586

M3 - Conference article

AN - SCOPUS:0032672417

SN - 0277-786X

VL - 3629

SP - 223

EP - 229

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Photodetectors: Materials and Devices IV

Y2 - 27 January 1999 through 29 January 1999

ER -

Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Abstract

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