Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Keyphrases

• Sapphire 100%
• GaN Films 100%
• Lateralized Overgrowth 100%
• Schottky 100%
• MSM Photodetector 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Low Pressure 50%
• Metal-semiconductor-metal 50%
• Photodetector 50%
• Sapphire Substrate 50%
• Bias Voltage 50%
• Interdigitated Fingers 50%
• SiOx 50%
• UV Photodetector 50%
• Basal Plane 50%
• Optical Power 50%
• Time Response 50%
• Spectral Responsivity 50%
• Lateral Growth Rate 50%
• Finger Patterns 50%
• Detector Orientation 50%
• Vertical Growth Rate 50%

Engineering

• Photometer 100%
• Optical Power 33%
• Chemical Vapor Deposition 33%
• Sapphire Substrate 33%
• Vapor Deposition 33%
• Bias Voltage 33%
• Response Time 33%
• Lateral Growth 33%
• Spectral Responsivity 33%
• Basal Plane 33%

Material Science

• Film 100%
• Sapphire 100%
• Optical Power 50%
• Chemical Vapor Deposition 50%