Abstract
We have investigated the secondary electron generation in electron-beam-irradiated solids by means of a Monte Carlo simulation. The slow secondary electron energy was found to be independent of the position and the incident energy of the electron beam, and the electron beam broadening in thin films due to secondary electrons was found to be at least 5-10 nm, setting limits to the nanolithographic resolution.
Original language | English |
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Pages (from-to) | 1720-1723 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 55 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2009 Oct |
Keywords
- Electron-beam nanolithography
- Monte Carlo simulation
- Secondary electron generation
ASJC Scopus subject areas
- General Physics and Astronomy