Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

Jin Young Kim; Jun Hong Noh; Sangwook Lee; Sung Hun Yoon; Chin Moo Cho; Kug Sun Hong; Hyun Suk Jung; Jung Kun Lee

doi:10.1063/1.2806193

Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

Jin Young Kim, Jun Hong Noh, Sangwook Lee, Sung Hun Yoon, Chin Moo Cho, Kug Sun Hong, Hyun Suk Jung, Jung Kun Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect.

Original language	English
Article number	232903
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2806193
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2806193

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title = "Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films",

abstract = "Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect.",

author = "Kim, {Jin Young} and Noh, {Jun Hong} and Sangwook Lee and Yoon, {Sung Hun} and Cho, {Chin Moo} and Hong, {Kug Sun} and Jung, {Hyun Suk} and Lee, {Jung Kun}",

year = "2007",

doi = "10.1063/1.2806193",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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TY - JOUR

T1 - Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

AU - Kim, Jin Young

AU - Noh, Jun Hong

AU - Lee, Sangwook

AU - Yoon, Sung Hun

AU - Cho, Chin Moo

AU - Hong, Kug Sun

AU - Jung, Hyun Suk

AU - Lee, Jung Kun

PY - 2007

Y1 - 2007

N2 - Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect.

AB - Highly (hhh) -oriented pyrochlore Bi-Zn-Ti-Nb-O (BZTN) thin films were fabricated via metal-organic decomposition using orientation template layers. The preferred orientation was ascribed to the interfacial layer, the lattice parameter of which is similar to BZTN. High-resolution transmission electron microscopy supported that the interfacial layer consists of Bi and Pt. The (hhh) -oriented thin films exhibited a highly insulating nature enabling feasible applications in electronic devices, particularly voltage tunable application. The BZTN thin films did not show any apparent dielectric anisotropy and the slightly enhanced dielectric properties were discussed in connection to the internal stress and the grain boundary effect.

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U2 - 10.1063/1.2806193

DO - 10.1063/1.2806193

M3 - Article

AN - SCOPUS:36849040428

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232903

ER -

Seed-layer mediated orientation evolution in dielectric Bi-Zn-Ti-Nb-O thin films

Abstract

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