Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

S. J. Kahng; Y. H. Ha; D. W. Moon; Y. Kuk

doi:10.1063/1.1288005

Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

S. J. Kahng^*
, Y. H. Ha
, D. W. Moon
, Y. Kuk

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

Original language	English
Pages (from-to)	981-983
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	7
DOIs	https://doi.org/10.1063/1.1288005
Publication status	Published - 2000 Aug 14
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1288005

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title = "Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant",

abstract = "Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.",

author = "Kahng, \{S. J.\} and Ha, \{Y. H.\} and Moon, \{D. W.\} and Y. Kuk",

year = "2000",

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doi = "10.1063/1.1288005",

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journal = "Applied Physics Letters",

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T1 - Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

AU - Kahng, S. J.

AU - Ha, Y. H.

AU - Moon, D. W.

AU - Kuk, Y.

PY - 2000/8/14

Y1 - 2000/8/14

N2 - Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

AB - Si surface segregation was studied quantitatively in Ge overlayers grown on Si(100)-(2 X 1) with medium energy ion scattering spectroscopy. The behavior of Si surface peak, as a function of Ge coverage, is explained with known growth structures in the Stranski-Krastanov Ge overlayers. We observed that the intermixing between Ge and Si is not significant in the presence of hydrogen surfactant. Possible microscopic models for the observed results are presented.

UR - https://www.scopus.com/pages/publications/0001506180

U2 - 10.1063/1.1288005

DO - 10.1063/1.1288005

M3 - Article

AN - SCOPUS:0001506180

SN - 0003-6951

VL - 77

SP - 981

EP - 983

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant

Abstract

ASJC Scopus subject areas

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