Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate

Min Joo Ahn, Woo Seop Jeong, Kyu Yeon Shim, Seongho Kang, Hwayoung Kim, Dae Sik Kim, Junggeun Jhin, Jaekyun Kim, Dongjin Byun

Research output: Contribution to journalArticlepeer-review


This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition conditions. The SAG of GaN was only observed on the plateau region of the PP-PSS, irrespective of the number of growth cycles. Indirect samples deposited on the bare c-plane substrate were prepared to determine the difference between the AlN buffer layers in the plateau region and silicon oxide ((Formula presented.)). The AlN buffer layer in the plateau region exhibited a higher surface energy, and its crystal orientation is indicated by AlN [001]. In contrast, regions other than the plateau region did not exhibit crystallinity and presented lower surface energies. The direct analysis results of PP-PSS using transmission electron microscopy (TEM) and electron backscattered diffraction (EBSD) are similar to the results of the indirect samples. Therefore, under the same conditions, the GaN SAG of the deposited layer is related to crystallinity, crystal orientation, and surface energy.

Original languageEnglish
Article number2462
Issue number6
Publication statusPublished - 2023 Mar


  • AlN
  • GaN
  • SAG
  • aluminum nitride
  • epitaxial growth
  • gallium nitride
  • pulsed MOCVD
  • selective-area growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics


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