Selective-area high-quality germanium growth for monolithic integrated optoelectronics

Engineering

• VLSI Circuits 100%
• Integrated Optoelectronics 100%
• Photodiode 50%
• Optoelectronics 50%
• Atomic Force Microscope 50%
• Defect Density 50%
• Root Mean Square 50%
• Silicon Substrate 50%
• Dislocation Density 50%
• Threading Dislocation 50%
• Plan View 50%
• Dependent Growth 50%
• Integrated Circuit 50%

Keyphrases

• Integrated Optoelectronics 100%
• Selective-area 100%
• Germanium 100%
• Monolithic Integrated 100%
• Surface Roughness 33%
• Very Large Scale Integration 33%
• Silica 16%
• Microscopic Analysis 16%
• Silicon Substrate 16%
• Atomic Force Microscope 16%
• Low Defect Density 16%
• Root Mean Square 16%
• Plan-view 16%
• Hydrogen Annealing 16%
• Multistep Deposition 16%
• Germanium Devices 16%
• Threading Dislocation Density 16%
• Integrated Components 16%
• Annealing Cycles 16%
• Metal-semiconductor-metal Photodiode 16%

Material Science

• Germanium 100%
• Silicon 57%
• Surface Roughness 28%
• Annealing 14%
• Density 14%
• Microscopy 14%
• Defect Density 14%