Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping

S. Kim, S. J. Rhee, X. Li, J. J. Coleman, S. G. Bishop

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The ∼1540 nm 4I13/2 to 4I15/2 Er3+ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-doped GaN reveal a selective enhancement of one of the nine different Er3+ centers observed previously in PL and PLE studies of Er-implanted undoped GaN. These Er3+ PL spectra are excited selectively by pump wavelengths that correspond to broadband, below-gap absorption bands associated with different Er3+ centers. In the Er-implanted, Mg-doped GaN, both the 1540 nm PL spectrum characteristic of the so-called violet-pumped Er3+ center and the ∼2.8-3.4 eV (violet) PLE band that enables its selective excitation are significantly enhanced by Mg doping. In addition, the violet-pumped PL center dominates the above-gap-excited Er3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was nearly unobserveable under above-gap excitation in Er-implanted undoped GaN. These results confirm our hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er3+ emission in Er-implanted GaN.

Original languageEnglish
Pages (from-to)2403-2405
Number of pages3
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2000 Apr 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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