Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure

Sun Il Shim; Young Suk Kwon; Seong Il Kim; Yong Tae Kim; Jung Ho Park

doi:10.1116/1.1701859

Selective etching process of SrBi₂Ta₂O₉ and CeO₂ for self-aligned ferroelectric gate structure

Sun Il Shim, Young Suk Kwon, Seong Il Kim, Yong Tae Kim, Jung Ho Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The etching selectivity between SrBi₂Ta₂O (SBT) and CeO₂ films was investigated. The study was carried out by optimizing gas mixture of Ar and Cl₂, the inductively coupled plasma (ICP) power and the rf bias power in the ICP-reactive ion etching (RIE) system. It was found that the ion etching selectivity of SBT/CeO₂ was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl ₂ concentration. It was also observed that the etch rates of the HfO based dielectric films appear to depend on etch properties of each phase in the films.

Original language	English
Pages (from-to)	1559-1563
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1701859
Publication status	Published - 2004 Jul

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "The etching selectivity between SrBi2Ta2O (SBT) and CeO2 films was investigated. The study was carried out by optimizing gas mixture of Ar and Cl2, the inductively coupled plasma (ICP) power and the rf bias power in the ICP-reactive ion etching (RIE) system. It was found that the ion etching selectivity of SBT/CeO2 was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl 2 concentration. It was also observed that the etch rates of the HfO based dielectric films appear to depend on etch properties of each phase in the films.",

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AU - Kim, Seong Il

AU - Kim, Yong Tae

AU - Park, Jung Ho

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AB - The etching selectivity between SrBi2Ta2O (SBT) and CeO2 films was investigated. The study was carried out by optimizing gas mixture of Ar and Cl2, the inductively coupled plasma (ICP) power and the rf bias power in the ICP-reactive ion etching (RIE) system. It was found that the ion etching selectivity of SBT/CeO2 was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl 2 concentration. It was also observed that the etch rates of the HfO based dielectric films appear to depend on etch properties of each phase in the films.

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Selective etching process of SrBi₂Ta₂O₉ and CeO₂ for self-aligned ferroelectric gate structure

Abstract

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