Selective formation of InAs quantum dot structures grown by molecular beam epitaxy

We report on the selective formation of self-assembled quantum dots (QDs) using the {111}-facet revealed GaAs substrate and masked substrate by nano patterned GazOa thin film. Using the {111}-facet revealed substrate, higher migration effect of the In atoms on the {111}-facet compared to the (100) plane enables the selective formation of InAs QDs. In the case of the masked substrate by Ga ₂O ₃ thin film, more effective and easy selective formation of self-assembled QDs could be realized. The selectivity of the QDs growth was obtained successfully using the 0.2 μm patterned Ga ₂O ₃ layer, which resulted from the enhanced migration effect of the adsorbed In atoms on the Ga ₂U ₃ surface as well as the desorption effect.