Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Y. Huh; J. Y. Lee; J. H. Lee; T. J. Lee; S. C. Lyu; C. J. Lee

doi:10.1016/S0009-2614(03)00869-8

Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Y. Huh, J. Y. Lee, J. H. Lee, T. J. Lee, S. C. Lyu, C. J. Lee

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

Original language	English
Pages (from-to)	388-392
Number of pages	5
Journal	Chemical Physics Letters
Volume	375
Issue number	3-4
DOIs	https://doi.org/10.1016/S0009-2614(03)00869-8
Publication status	Published - 2003 Jul 3
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/S0009-2614(03)00869-8

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title = "Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates",

abstract = "We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.",

author = "Y. Huh and Lee, {J. Y.} and Lee, {J. H.} and Lee, {T. J.} and Lyu, {S. C.} and Lee, {C. J.}",

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T1 - Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

AU - Huh, Y.

AU - Lee, J. Y.

AU - Lee, J. H.

AU - Lee, T. J.

AU - Lyu, S. C.

AU - Lee, C. J.

PY - 2003/7/3

Y1 - 2003/7/3

N2 - We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

AB - We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

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VL - 375

SP - 388

EP - 392

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 3-4

ER -

Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Abstract

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