Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Y. Huh; J. Y. Lee; J. H. Lee; T. J. Lee; S. C. Lyu; C. J. Lee

doi:10.1016/S0009-2614(03)00869-8

Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Y. Huh
, J. Y. Lee^*
, J. H. Lee
, T. J. Lee
, S. C. Lyu
, C. J. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

Original language	English
Pages (from-to)	388-392
Number of pages	5
Journal	Chemical Physics Letters
Volume	375
Issue number	3-4
DOIs	https://doi.org/10.1016/S0009-2614(03)00869-8
Publication status	Published - 2003 Jul 3
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/S0009-2614(03)00869-8

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title = "Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates",

abstract = "We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.",

author = "Y. Huh and Lee, \{J. Y.\} and Lee, \{J. H.\} and Lee, \{T. J.\} and Lyu, \{S. C.\} and Lee, \{C. J.\}",

year = "2003",

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doi = "10.1016/S0009-2614(03)00869-8",

language = "English",

volume = "375",

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journal = "Chemical Physics Letters",

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TY - JOUR

T1 - Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

AU - Huh, Y.

AU - Lee, J. Y.

AU - Lee, J. H.

AU - Lee, T. J.

AU - Lyu, S. C.

AU - Lee, C. J.

PY - 2003/7/3

Y1 - 2003/7/3

N2 - We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

AB - We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.

UR - https://www.scopus.com/pages/publications/0037866585

U2 - 10.1016/S0009-2614(03)00869-8

DO - 10.1016/S0009-2614(03)00869-8

M3 - Article

AN - SCOPUS:0037866585

SN - 0009-2614

VL - 375

SP - 388

EP - 392

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 3-4

ER -

Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates

Abstract

ASJC Scopus subject areas

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