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Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates
Y. Huh
, J. Y. Lee
*
, J. H. Lee
, T. J. Lee
, S. C. Lyu
,
C. J. Lee
*
Corresponding author for this work
Research output
:
Contribution to journal
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Article
›
peer-review
41
Citations (Scopus)
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Dive into the research topics of 'Selective growth and field emission of vertically well-aligned carbon nanotubes on hole-patterned silicon substrates'. Together they form a unique fingerprint.
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Keyphrases
Well-aligned
100%
Silicon Substrate
100%
Aligned Carbon Nanotubes
100%
Patterned Silicon
100%
Field Emission
100%
Carbon Nanotubes
100%
Selective Growth
100%
Gate Voltage
66%
Acetylene Gas
33%
Thermal Chemical Vapor Deposition
33%
High Purity
33%
Excellent Selectivity
33%
Emission Current Density
33%
Bamboo-like
33%
Hole Pattern
33%
Multi-walled
33%
Triode Structure
33%
Engineering
Field Emission
100%
Carbon Nanotube
100%
Silicon Substrate
100%
Gate Voltage
40%
Chemical Vapor Deposition
20%
Vapor Deposition
20%
Acetylene Gas
20%
Material Science
Silicon
100%
Carbon Nanotube
100%
Density
20%
Thermal Chemical Vapor Deposition
20%
Chemical Engineering
Carbon Nanotube
100%
Vapor Deposition
20%
Chemical Vapor Deposition
20%