Abstract
We report selective lateral nano-bridging of carbon nanowire (CNW) between microsized islands using conventional photolithography technique necessary for the nanomachining and the molecular device applications compatible with Si-based process. Most distinct feature in this work is to use a growth barrier of Nb metal or insulating layer on the top of the catalytic Ni metal to prevent the growth of CNW from vertical direction to the substrate. As a result, CNWs of either "straight line" or a "Y-junction" were selectively grown between lateral sides of the catalytic metals or pre-defined electrodes without any trace of vertical growth. These results clearly indicate that this method would be one of the most feasible fabrication techniques for the nanomachines or the electronic applications with high integration level through process optimization.
Original language | English |
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Title of host publication | Nanonetwork Materials |
Subtitle of host publication | Fullerenes, Nanotubes, and Related Systems |
Editors | Tsuneya Ando, Yoshihiro Iwasawa, Koichi Kikuchi, Yahachi Saito, Susumu Saito, Mototada Kobayashi |
Publisher | American Institute of Physics Inc. |
Pages | 75-78 |
Number of pages | 4 |
ISBN (Electronic) | 0735400326, 9780735400320 |
DOIs | |
Publication status | Published - 2001 Oct 16 |
Event | International Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001 - Kamakura, Japan Duration: 2001 Jan 15 → 2001 Jan 18 |
Publication series
Name | AIP Conference Proceedings |
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Volume | 590 |
ISSN (Print) | 0094-243X |
ISSN (Electronic) | 1551-7616 |
Other
Other | International Symposium on Nanonetwork Materials: Fullerenes, Nanotubes, and Related Systems 2001 |
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Country/Territory | Japan |
City | Kamakura |
Period | 01/1/15 → 01/1/18 |
Bibliographical note
Publisher Copyright:© 2001 American Institute of Physics.
ASJC Scopus subject areas
- General Physics and Astronomy