Abstract
We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
Original language | English |
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Pages (from-to) | 7536-7544 |
Number of pages | 9 |
Journal | ACS nano |
Volume | 9 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2015 Jul 28 |
Bibliographical note
Publisher Copyright:© 2015 American Chemical Society.
Keywords
- CMOS inverter
- PbSe
- colloidal nanowires
- photodiode
- pn junction
- selective doping
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy