Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology

B. Jagannathan; M. Khater; F. Pagette; J. S. Rieh; D. Angell; H. Chen; J. Florkey; F. Golan; D. R. Greenberg; R. Groves; S. J. Jeng; J. Johnson; E. Mengistu; K. T. Schonenberg; C. M. Schnabel; P. Smith; A. Stricker; D. Ahlgren; G. Freeman; K. Stein; S. Subbanna

doi:10.1109/55.998869

Self-aligned SiGe NPN transistors with 285 GHz f _MAX and 207 GHz f _T in a manufacturable technology

B. Jagannathan^*
, M. Khater
, F. Pagette
, J. S. Rieh
, D. Angell
, H. Chen
, J. Florkey
, F. Golan
, D. R. Greenberg
, R. Groves
, S. J. Jeng
, J. Johnson
, E. Mengistu
, K. T. Schonenberg
, C. M. Schnabel
, P. Smith
, A. Stricker
, D. Ahlgren
, G. Freeman
, K. Stein

S. Subbanna

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

261 Citations (Scopus)

Abstract

This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f _T) of 207 GHz and an f _MAX extrapolated from Mason's unilateral gain of 285 GHz. f _MAX extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12 × 2.5 μm ² have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm ²). Smaller transistors (0.12 × 0.5 μm ²) have an f _T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 kΩ/sq. and an open-base breakdown voltage BV _CEO of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f _T at small lateral dimensions.

Original language	English
Pages (from-to)	258-260
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	5
DOIs	https://doi.org/10.1109/55.998869
Publication status	Published - 2002 May
Externally published	Yes

Keywords

Germanium
Heterojunction bipolar transistors (HBTs)
High-speed devices
SiGe
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.998869

Cite this

Jagannathan, B., Khater, M., Pagette, F., Rieh, J. S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D. R., Groves, R., Jeng, S. J., Johnson, J., Mengistu, E., Schonenberg, K. T., Schnabel, C. M., Smith, P., Stricker, A., Ahlgren, D., Freeman, G., ... Subbanna, S. (2002). Self-aligned SiGe NPN transistors with 285 GHz f _MAX and 207 GHz f _T in a manufacturable technology. IEEE Electron Device Letters, 23(5), 258-260. https://doi.org/10.1109/55.998869

Jagannathan, B, Khater, M, Pagette, F, Rieh, JS, Angell, D, Chen, H, Florkey, J, Golan, F, Greenberg, DR, Groves, R, Jeng, SJ, Johnson, J, Mengistu, E, Schonenberg, KT, Schnabel, CM, Smith, P, Stricker, A, Ahlgren, D, Freeman, G, Stein, K & Subbanna, S 2002, 'Self-aligned SiGe NPN transistors with 285 GHz f _MAX and 207 GHz f _T in a manufacturable technology', IEEE Electron Device Letters, vol. 23, no. 5, pp. 258-260. https://doi.org/10.1109/55.998869

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title = "Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology",

abstract = "This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and an f MAX extrapolated from Mason's unilateral gain of 285 GHz. f MAX extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12 × 2.5 μm 2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm 2). Smaller transistors (0.12 × 0.5 μm 2) have an f T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 kΩ/sq. and an open-base breakdown voltage BV CEO of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f T at small lateral dimensions.",

keywords = "Germanium, Heterojunction bipolar transistors (HBTs), High-speed devices, SiGe, Silicon",

author = "B. Jagannathan and M. Khater and F. Pagette and Rieh, \{J. S.\} and D. Angell and H. Chen and J. Florkey and F. Golan and Greenberg, \{D. R.\} and R. Groves and Jeng, \{S. J.\} and J. Johnson and E. Mengistu and Schonenberg, \{K. T.\} and Schnabel, \{C. M.\} and P. Smith and A. Stricker and D. Ahlgren and G. Freeman and K. Stein and S. Subbanna",

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AU - Jagannathan, B.

AU - Khater, M.

AU - Pagette, F.

AU - Rieh, J. S.

AU - Angell, D.

AU - Chen, H.

AU - Florkey, J.

AU - Golan, F.

AU - Greenberg, D. R.

AU - Groves, R.

AU - Jeng, S. J.

AU - Johnson, J.

AU - Mengistu, E.

AU - Schonenberg, K. T.

AU - Schnabel, C. M.

AU - Smith, P.

AU - Stricker, A.

AU - Ahlgren, D.

AU - Freeman, G.

AU - Stein, K.

AU - Subbanna, S.

PY - 2002/5

Y1 - 2002/5

N2 - This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and an f MAX extrapolated from Mason's unilateral gain of 285 GHz. f MAX extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12 × 2.5 μm 2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm 2). Smaller transistors (0.12 × 0.5 μm 2) have an f T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 kΩ/sq. and an open-base breakdown voltage BV CEO of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f T at small lateral dimensions.

AB - This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f T) of 207 GHz and an f MAX extrapolated from Mason's unilateral gain of 285 GHz. f MAX extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12 × 2.5 μm 2 have these characteristics at a linear current of 1.0 mA/μm (8.3 mA/μm 2). Smaller transistors (0.12 × 0.5 μm 2) have an f T of 180 GHz at 800 μA current. The devices have a pinched base sheet resistance of 2.5 kΩ/sq. and an open-base breakdown voltage BV CEO of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f T at small lateral dimensions.

KW - Germanium

KW - Heterojunction bipolar transistors (HBTs)

KW - High-speed devices

KW - SiGe

KW - Silicon

UR - https://www.scopus.com/pages/publications/0036575795

U2 - 10.1109/55.998869

DO - 10.1109/55.998869

M3 - Letter

AN - SCOPUS:0036575795

SN - 0741-3106

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EP - 260

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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