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Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology

  • B. Jagannathan*
  • , M. Khater
  • , F. Pagette
  • , J. S. Rieh
  • , D. Angell
  • , H. Chen
  • , J. Florkey
  • , F. Golan
  • , D. R. Greenberg
  • , R. Groves
  • , S. J. Jeng
  • , J. Johnson
  • , E. Mengistu
  • , K. T. Schonenberg
  • , C. M. Schnabel
  • , P. Smith
  • , A. Stricker
  • , D. Ahlgren
  • , G. Freeman
  • , K. Stein
    • S. Subbanna
*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

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