Self-annealing in neutron-irradiated algangan high electron mobility transistors

Hong Yeol Kim; Fan Ren; S. J. Pearton; Jihyun Kim

doi:10.1149/1.3082498

Self-annealing in neutron-irradiated algangan high electron mobility transistors

Hong Yeol Kim, Fan Ren, S. J. Pearton, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The recovery at room temperature of neutron-irradiated (average neutron energy 9.8 MeV) AlGaNGaN high electron mobility transistors was studied by monitoring the electrical properties for a month. The initial changes in dc characteristics of the devices after neutron irradiation are consistent with the removal of free carriers by creation of deep levels in the bandgap. However, this lattice-displacement damage is unstable at room temperature and a self-annealing effect is observed. At a dose of 5.49× 1011 neutron cm2, the degradation of device drain-source current and transconductance was maximized one week after exposure to the neutron flux and was completely recovered three weeks after the irradiation.

Original language	English
Pages (from-to)	H173-H175
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1149/1.3082498
Publication status	Published - 2009

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "The recovery at room temperature of neutron-irradiated (average neutron energy 9.8 MeV) AlGaNGaN high electron mobility transistors was studied by monitoring the electrical properties for a month. The initial changes in dc characteristics of the devices after neutron irradiation are consistent with the removal of free carriers by creation of deep levels in the bandgap. However, this lattice-displacement damage is unstable at room temperature and a self-annealing effect is observed. At a dose of 5.49× 1011 neutron cm2, the degradation of device drain-source current and transconductance was maximized one week after exposure to the neutron flux and was completely recovered three weeks after the irradiation.",

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N2 - The recovery at room temperature of neutron-irradiated (average neutron energy 9.8 MeV) AlGaNGaN high electron mobility transistors was studied by monitoring the electrical properties for a month. The initial changes in dc characteristics of the devices after neutron irradiation are consistent with the removal of free carriers by creation of deep levels in the bandgap. However, this lattice-displacement damage is unstable at room temperature and a self-annealing effect is observed. At a dose of 5.49× 1011 neutron cm2, the degradation of device drain-source current and transconductance was maximized one week after exposure to the neutron flux and was completely recovered three weeks after the irradiation.

AB - The recovery at room temperature of neutron-irradiated (average neutron energy 9.8 MeV) AlGaNGaN high electron mobility transistors was studied by monitoring the electrical properties for a month. The initial changes in dc characteristics of the devices after neutron irradiation are consistent with the removal of free carriers by creation of deep levels in the bandgap. However, this lattice-displacement damage is unstable at room temperature and a self-annealing effect is observed. At a dose of 5.49× 1011 neutron cm2, the degradation of device drain-source current and transconductance was maximized one week after exposure to the neutron flux and was completely recovered three weeks after the irradiation.

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Self-annealing in neutron-irradiated algangan high electron mobility transistors

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