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Self-annealing in neutron-irradiated algangan high electron mobility transistors
Hong Yeol Kim
, Fan Ren
, S. J. Pearton
, Jihyun Kim
Research output
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Contribution to journal
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Article
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peer-review
9
Citations (Scopus)
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Keyphrases
Room Temperature
100%
Self-annealing
100%
High Electron Mobility Transistor
100%
Neutron-irradiated
100%
Electrical Properties
50%
Neutron Irradiation
50%
Neutron
50%
Irradiation
50%
Band Gap
50%
Neutron Flux
50%
Drain-source Current
50%
Transconductance
50%
DC Characteristics
50%
Annealing Effect
50%
Free Carriers
50%
Displacement Damage
50%
Average Neutron Energy
50%
Engineering
Room Temperature
100%
Deep Level
50%
Current Source
50%
Neutron Flux
50%
Neutron Energy
50%
Annealing Effect
50%
Band Gap
50%
Material Science
Annealing
100%
Electron Mobility
100%
Transistor
100%
Neutron Irradiation
50%