Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

Material Science

• Chemical Vapor Deposition 100%
• Silicon 100%
• Density 66%
• Photoluminescence 66%
• Cathodoluminescence 66%
• Energy-Dispersive X-Ray Spectroscopy 66%
• Single Crystal 66%
• Thin Films 33%
• Film Thickness 33%
• Surface Morphology 33%
• Optical Property 33%
• Scanning Electron Microscopy 33%
• Gallium 33%
• Scanning Electron Microscopy-Energy Dispersive X-Ray 33%
• Surface (Surface Science) 33%
• Phase Composition 33%

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Nanocolumns 100%
• Si(111) Substrate 100%
• Seeding Method 100%
• Ga-based Alloy 100%
• Single Crystal 20%
• Cathodoluminescence 20%
• Low Dislocation Density 20%
• Column Array 20%
• Au Thin Film 10%
• Photoluminescence 10%
• Surface Morphology 10%
• Chemical Composition 10%
• Optical Properties 10%
• Scanning Electron Microscope Image 10%
• Silicon Substrate 10%
• Morphological Properties 10%
• Photoluminescence Spectra 10%
• Device Performance 10%
• Energy Dispersive X-ray Spectroscopy 10%
• Uniformly Distributed 10%
• As-grown 10%
• Silicon Surface 10%
• Nitrogen Ions 10%
• Vertical Growth 10%
• Scanning Electron Microscopy/energy Dispersive Spectroscopy 10%
• Full Width at Half Maximum 10%
• Band-edge Emission 10%
• Growth Parameters 10%
• Alloy Droplet 10%
• Thin Film Thickness 10%
• Optical Quality 10%
• Gallium Ions 10%
• Silicon(111) 10%

Engineering

• Energy Engineering 100%
• Chemical Vapor Deposition 100%
• Vapor Deposition 100%
• Dislocation Density 100%
• Thin Films 50%
• Surface Morphology 50%
• Band Edge 50%
• Device Performance 50%
• Silicon Substrate 50%
• Silicon Surface 50%
• Growth Parameter 50%
• Optical Quality 50%