An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.
|Journal||Digests of the Intermag Conference|
|Publication status||Published - 2000 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering