Self limited and selective oxidation of aluminum in magnetic tunnel junctions using a source of atomic oxygen

K. Ounadjela; G. Van der Leeden; D. K. Kim; J. E. Nunez-Regueiro; S. McAllister; D. Heimanson; Young-geun Kim; Hee Kyung; Chang Kyung Kim

doi:10.1109/INTMAG.2000.872284

Self limited and selective oxidation of aluminum in magnetic tunnel junctions using a source of atomic oxygen

K. Ounadjela, G. Van der Leeden, D. K. Kim, J. E. Nunez-Regueiro, S. McAllister, D. Heimanson, Young-geun Kim, Hee Kyung, Chang Kyung Kim

Research output: Contribution to journal › Article › peer-review

Abstract

An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.

Original language	English
Pages (from-to)	GB-9
Journal	Digests of the Intermag Conference
DOIs	https://doi.org/10.1109/INTMAG.2000.872284
Publication status	Published - 2000 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INTMAG.2000.872284

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title = "Self limited and selective oxidation of aluminum in magnetic tunnel junctions using a source of atomic oxygen",

abstract = "An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.",

author = "K. Ounadjela and {Van der Leeden}, G. and Kim, {D. K.} and Nunez-Regueiro, {J. E.} and S. McAllister and D. Heimanson and Young-geun Kim and Hee Kyung and Kim, {Chang Kyung}",

year = "2000",

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doi = "10.1109/INTMAG.2000.872284",

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AU - Ounadjela, K.

AU - Van der Leeden, G.

AU - Kim, D. K.

AU - Nunez-Regueiro, J. E.

AU - McAllister, S.

AU - Heimanson, D.

AU - Kim, Young-geun

AU - Kyung, Hee

AU - Kim, Chang Kyung

PY - 2000/1/1

Y1 - 2000/1/1

N2 - An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.

AB - An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.

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JO - Digests of the Intermag Conference

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ER -

Self limited and selective oxidation of aluminum in magnetic tunnel junctions using a source of atomic oxygen

Abstract

ASJC Scopus subject areas

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