Abstract
An attempt was made to fabricate tunnel junctions for which the oxidation of the metallic Al is self-limited and selective. It was demonstrated that oxidation using an atomic source of oxygen is rapid and self-limiting and allows formation of very stable AlOx film.
Original language | English |
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Pages (from-to) | GB-9 |
Journal | Digests of the Intermag Conference |
DOIs | |
Publication status | Published - 2000 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering