Abstract
Nanometer sized Ag clusters were found to be uniformly formed in the initial stage of Ag growth on Sb-terminated Si(100) surfaces. Due to the saturation of Si dangling bonds by Sb adatoms, Ag clusters were grown on the Sb-terminated Si(100) surface without a Ag wetting layer. We found that the diameters and heights of Ag clusters were confined to a nanometer scale, and the size distribution was quite uniform compared to Ag growth on Sb-terminated Si(111). Those features are considered to result from the separation of Ag clusters by coherently aligned voids in the underlying Sb-terminated Si(100) surface. Tunneling spectroscopy measurements showed that the local conduction properties of Ag clusters gradually changed from semiconducting to metallic as Ag coverage increased.
| Original language | English |
|---|---|
| Pages (from-to) | 320-327 |
| Number of pages | 8 |
| Journal | Surface Science |
| Volume | 415 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1998 Oct 9 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work has been supported by the Ministry of Information and Communications, Korea.
Keywords
- Antimony
- Clusters
- Morphology
- Roughness and topography
- Scanning tunneling microscopy
- Scanning tunneling spectroscopy
- Silicon
- Silver
- Surface electrical transport
- Surface structure
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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