Abstract
We discuss the formation of self-assembling II-VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35 ∓ 5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton localization, as evidenced by very intense PL emission even at relatively high temperatures.
Original language | English |
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Pages (from-to) | 228-236 |
Number of pages | 9 |
Journal | Journal of Crystal Growth |
Volume | 184-185 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Bibliographical note
Funding Information:We thank A.L. Barabasi, M. Dobrowolska, I. Daruka, and C. Kim for valuable discussions and insights; U. Bindley for her valuable help in the MBE growth of the samples; and M. Kim for help with PL measurments.T his researchw as supported by NSF Grant DMR 92-08400, ARPA/ONR Grant N00014-95-1-1166,a nd the NSF Science and Technology Center for Quantized Electronic Structures (QUEST), Grant DMR 91-20007.
Keywords
- AFM
- II-VI semiconductors
- Photoluminescence
- Quantum dots
- Ripening
- Self-assembling
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry