Self-organized growth, ripening, and optical properties of wide-bandgap II-VI quantum dots

J. L. Merz, S. Lee, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)

Abstract

We discuss the formation of self-assembling II-VI quantum dots during MBE growth, with emphasis on CdSe dots grown on ZnSe. AFM measurements on specimens with uncapped dots show relatively narrow dot size distributions, with typical dot diameters of 35 ∓ 5 nm. Uncapped CdSe dots are unstable with time, showing clear evidence of ripening. Photoluminescence from capped dots indicates strong exciton localization, as evidenced by very intense PL emission even at relatively high temperatures.

Original languageEnglish
Pages (from-to)228-236
Number of pages9
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 1998
Externally publishedYes

Bibliographical note

Funding Information:
We thank A.L. Barabasi, M. Dobrowolska, I. Daruka, and C. Kim for valuable discussions and insights; U. Bindley for her valuable help in the MBE growth of the samples; and M. Kim for help with PL measurments.T his researchw as supported by NSF Grant DMR 92-08400, ARPA/ONR Grant N00014-95-1-1166,a nd the NSF Science and Technology Center for Quantized Electronic Structures (QUEST), Grant DMR 91-20007.

Keywords

  • AFM
  • II-VI semiconductors
  • Photoluminescence
  • Quantum dots
  • Ripening
  • Self-assembling

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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