Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Chang Sik Son; Mustuo Ogura; Yun Mo Sung; Si Jong Leem; Tae Geun Kim

doi:10.1002/pssa.200622433

Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Chang Sik Son, Mustuo Ogura, Yun Mo Sung, Si Jong Leem, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

Abstract

Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH ₃ during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [01̄1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 ³ cm ^-1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.

Original language	English
Pages (from-to)	3121-3125
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	9
DOIs	https://doi.org/10.1002/pssa.200622433
Publication status	Published - 2007 Sept

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.200622433

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abstract = "Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH 3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [0{\=1}1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 3 cm -1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.",

author = "Son, {Chang Sik} and Mustuo Ogura and Sung, {Yun Mo} and Leem, {Si Jong} and Kim, {Tae Geun}",

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AU - Son, Chang Sik

AU - Ogura, Mustuo

AU - Sung, Yun Mo

AU - Leem, Si Jong

AU - Kim, Tae Geun

PY - 2007/9

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AB - Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH 3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [01̄1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 3 cm -1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.

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Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

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