Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Chang Sik Son; Mustuo Ogura; Yun Mo Sung; Si Jong Leem; Tae Geun Kim

doi:10.1002/pssa.200622433

Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Chang Sik Son
, Mustuo Ogura
, Yun Mo Sung
, Si Jong Leem
, Tae Geun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH ₃ during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [01̄1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 ³ cm ^-1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.

Original language	English
Pages (from-to)	3121-3125
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	9
DOIs	https://doi.org/10.1002/pssa.200622433
Publication status	Published - 2007 Sept

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.200622433

Cite this

@article{d0590345a15d47b49fe965d70e5e8d9f,

title = "Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire",

abstract = "Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH 3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [0{\=1}1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 3 cm -1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.",

author = "Son, \{Chang Sik\} and Mustuo Ogura and Sung, \{Yun Mo\} and Leem, \{Si Jong\} and Kim, \{Tae Geun\}",

year = "2007",

month = sep,

doi = "10.1002/pssa.200622433",

language = "English",

volume = "204",

pages = "3121--3125",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "9",

}

TY - JOUR

T1 - Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

AU - Son, Chang Sik

AU - Ogura, Mustuo

AU - Sung, Yun Mo

AU - Leem, Si Jong

AU - Kim, Tae Geun

PY - 2007/9

Y1 - 2007/9

N2 - Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH 3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [01̄1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 3 cm -1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.

AB - Self-organized InAs quantum dots (QDs), by the Stranski-Krastanow mode, have been grown by using low-pressure metalorganic chemical vapor deposition on V-groove GaAs substrates. By adjusting the flow rate of AsH 3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [01̄1] direction only at the bottom of V-grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well-isolated along the [Oil] direction with a line density of 3 × 10 3 cm -1. These low-density InAs QDs are expected to be used in areas of quantum information and quantum computing.

UR - https://www.scopus.com/pages/publications/34548741356

U2 - 10.1002/pssa.200622433

DO - 10.1002/pssa.200622433

M3 - Article

AN - SCOPUS:34548741356

SN - 1862-6300

VL - 204

SP - 3121

EP - 3125

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 9

ER -

Self-organized InAs quantum dots grown in a V-groove InGaAs quantum wire

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this