Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by halide vapor-phase epitaxy

Jinho Bae, Ji Hyeon Park, Dae Woo Jeon, Jihyun Kim

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18 Citations (Scopus)


A compact self-powered solar-blind UV-C photodiode was demonstrated using an ultra-wide bandgap (UWBG) α-Ga2O3 thin film as a wavelength-selective absorber layer. The UWBG-based Schottky junction architecture renders the use of low-performance and bulky solar-blind UV bandpass filters unnecessary. High-quality α-Ga2O3 thin films with a thickness of 1.25 µm were grown on a (0001) sapphire substrate via the halide vapor-phase epitaxy technique. The self-powered solar-blind UV-C photodetector based on the Ni/α-Ga2O3 Schottky junction exhibited excellent responsivity (1.17 × 10−4 A/W), photo-to-dark current ratio (1.12 × 105), and reproducibility, as well as fast rise/decay characteristics without persistent photoconductivity upon exposure to UV-C radiation (254 nm wavelength). The relationship between light intensity (I) and photocurrent (P) was modeled by I ∼ P0.69, indicating the high-quality of the halide vapor-phase epitaxy-grown α-Ga2O3 thin film. Upon exposure to natural sunlight, the fabricated solar-blind photodetector showed excellent solar blindness with sensitivity to UV-C radiation and did not require an external power source. Therefore, this UWBG α-Ga2O3 thin-film Schottky barrier photodiode is expected to facilitate the development of a compact and energy-independent next-generation UV-C photodetector with solar blindness.

Original languageEnglish
Article number101108
JournalAPL Materials
Issue number10
Publication statusPublished - 2021 Oct 1

Bibliographical note

Funding Information:
The research at Korea University was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (Grant No. 20172010104830) and the National Research Foundation (NRF) of Korea (Grant Nos. 2020M3H4A3081799 and 2018R1D1A1B07048429).

Publisher Copyright:
© 2021 Author(s).

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering


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