Self-rectifying and artificial synaptic characteristics of amorphous Ta2O5 thin film grown on two-dimensional metal-oxide nanosheet

Bumjoo Kim; In Su Kim; Jong Un Woo; Seok June Chae; Su Hwan Go; Sahn Nahm

doi:10.1016/j.apsusc.2022.155353

Self-rectifying and artificial synaptic characteristics of amorphous Ta₂O₅ thin film grown on two-dimensional metal-oxide nanosheet

Bumjoo Kim, In Su Kim, Jong Un Woo, Seok June Chae, Su Hwan Go, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Amorphous Ta₂O₅ (ATa₂O₅) films were grown on Sr₂Nb₃O₁₀/TiN/SiO₂/Si (SN-TSS) at room temperature. Sr₂Nb₃O₁₀ (SN) metal-oxide nanosheets were used as a tunneling barrier to induce self-rectifying properties in ATa₂O₅ memristors. An ATa₂O₅ thin film grown on one SN monolayer exhibited a typical bipolar switching curve without any self-rectifying property, indicating that one SN monolayer cannot function as a tunneling barrier. This ATa₂O₅ thin film showed switching behavior owing to the formation and breakage of oxygen vacancy (OV) filaments. Self-rectifying characteristics were observed in an ATa₂O₅ thin film grown on two SN monolayers, which behaved as a tunneling barrier in the Pt/ATa₂O₅/SN-TSS memristor. The current conduction of this ATa₂O₅ thin film in the high-resistance state (HRS) is explained by Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. In the low-resistance state (LRS), this ATa₂O₅ thin film shows insulating behavior, indicating that OV filaments were not formed. The current conduction of this ATa₂O₅ thin film in the LRS was attributed to direct tunneling and FN tunneling. Moreover, ATa₂O₅ thin films grown on two SN monolayers exhibited artificial synaptic properties. Therefore, the ATa₂O₅ thin film can be used as an artificial synapse with a cross-sectional array structure.

Original language	English
Article number	155353
Journal	Applied Surface Science
Volume	609
DOIs	https://doi.org/10.1016/j.apsusc.2022.155353
Publication status	Published - 2023 Jan 30

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT)(2020R1A2B5B01002063) and the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596]. We thank the KU-KIST graduate school program of Korea University.

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT)(2020R1A2B5B01002063) and the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596]. We thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

Amorphous TaO thin film
Artificial synaptic properties
SrNbO nanosheets tunneling barrier
self-rectifying ReRAM memristor

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2022.155353

Cite this

@article{4373282cc0fc45e1aff1814354aa9746,

title = "Self-rectifying and artificial synaptic characteristics of amorphous Ta2O5 thin film grown on two-dimensional metal-oxide nanosheet",

abstract = "Amorphous Ta2O5 (ATa2O5) films were grown on Sr2Nb3O10/TiN/SiO2/Si (SN-TSS) at room temperature. Sr2Nb3O10 (SN) metal-oxide nanosheets were used as a tunneling barrier to induce self-rectifying properties in ATa2O5 memristors. An ATa2O5 thin film grown on one SN monolayer exhibited a typical bipolar switching curve without any self-rectifying property, indicating that one SN monolayer cannot function as a tunneling barrier. This ATa2O5 thin film showed switching behavior owing to the formation and breakage of oxygen vacancy (OV) filaments. Self-rectifying characteristics were observed in an ATa2O5 thin film grown on two SN monolayers, which behaved as a tunneling barrier in the Pt/ATa2O5/SN-TSS memristor. The current conduction of this ATa2O5 thin film in the high-resistance state (HRS) is explained by Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. In the low-resistance state (LRS), this ATa2O5 thin film shows insulating behavior, indicating that OV filaments were not formed. The current conduction of this ATa2O5 thin film in the LRS was attributed to direct tunneling and FN tunneling. Moreover, ATa2O5 thin films grown on two SN monolayers exhibited artificial synaptic properties. Therefore, the ATa2O5 thin film can be used as an artificial synapse with a cross-sectional array structure.",

keywords = "Amorphous TaO thin film, Artificial synaptic properties, SrNbO nanosheets tunneling barrier, self-rectifying ReRAM memristor",

author = "Bumjoo Kim and Kim, {In Su} and Woo, {Jong Un} and Chae, {Seok June} and Go, {Su Hwan} and Sahn Nahm",

note = "Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT)(2020R1A2B5B01002063) and the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596]. We thank the KU-KIST graduate school program of Korea University. Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT)(2020R1A2B5B01002063) and the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596]. We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2023",

month = jan,

day = "30",

doi = "10.1016/j.apsusc.2022.155353",

language = "English",

volume = "609",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Self-rectifying and artificial synaptic characteristics of amorphous Ta2O5 thin film grown on two-dimensional metal-oxide nanosheet

AU - Kim, Bumjoo

AU - Kim, In Su

AU - Woo, Jong Un

AU - Chae, Seok June

AU - Go, Su Hwan

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT)(2020R1A2B5B01002063) and the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596]. We thank the KU-KIST graduate school program of Korea University. Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government. (MSIT)(2020R1A2B5B01002063) and the National R&D Programs through the National Research Foundation of Korea (NRF) funded by ICT (Project no. 2020M3H4A3105596]. We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2023/1/30

Y1 - 2023/1/30

N2 - Amorphous Ta2O5 (ATa2O5) films were grown on Sr2Nb3O10/TiN/SiO2/Si (SN-TSS) at room temperature. Sr2Nb3O10 (SN) metal-oxide nanosheets were used as a tunneling barrier to induce self-rectifying properties in ATa2O5 memristors. An ATa2O5 thin film grown on one SN monolayer exhibited a typical bipolar switching curve without any self-rectifying property, indicating that one SN monolayer cannot function as a tunneling barrier. This ATa2O5 thin film showed switching behavior owing to the formation and breakage of oxygen vacancy (OV) filaments. Self-rectifying characteristics were observed in an ATa2O5 thin film grown on two SN monolayers, which behaved as a tunneling barrier in the Pt/ATa2O5/SN-TSS memristor. The current conduction of this ATa2O5 thin film in the high-resistance state (HRS) is explained by Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. In the low-resistance state (LRS), this ATa2O5 thin film shows insulating behavior, indicating that OV filaments were not formed. The current conduction of this ATa2O5 thin film in the LRS was attributed to direct tunneling and FN tunneling. Moreover, ATa2O5 thin films grown on two SN monolayers exhibited artificial synaptic properties. Therefore, the ATa2O5 thin film can be used as an artificial synapse with a cross-sectional array structure.

AB - Amorphous Ta2O5 (ATa2O5) films were grown on Sr2Nb3O10/TiN/SiO2/Si (SN-TSS) at room temperature. Sr2Nb3O10 (SN) metal-oxide nanosheets were used as a tunneling barrier to induce self-rectifying properties in ATa2O5 memristors. An ATa2O5 thin film grown on one SN monolayer exhibited a typical bipolar switching curve without any self-rectifying property, indicating that one SN monolayer cannot function as a tunneling barrier. This ATa2O5 thin film showed switching behavior owing to the formation and breakage of oxygen vacancy (OV) filaments. Self-rectifying characteristics were observed in an ATa2O5 thin film grown on two SN monolayers, which behaved as a tunneling barrier in the Pt/ATa2O5/SN-TSS memristor. The current conduction of this ATa2O5 thin film in the high-resistance state (HRS) is explained by Schottky emission, direct tunneling, and Fowler–Nordheim (FN) tunneling. In the low-resistance state (LRS), this ATa2O5 thin film shows insulating behavior, indicating that OV filaments were not formed. The current conduction of this ATa2O5 thin film in the LRS was attributed to direct tunneling and FN tunneling. Moreover, ATa2O5 thin films grown on two SN monolayers exhibited artificial synaptic properties. Therefore, the ATa2O5 thin film can be used as an artificial synapse with a cross-sectional array structure.

KW - Amorphous TaO thin film

KW - Artificial synaptic properties

KW - SrNbO nanosheets tunneling barrier

KW - self-rectifying ReRAM memristor

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DO - 10.1016/j.apsusc.2022.155353

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