Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Hee Dong Kim; Min Ju Yun; Tae Geun Kim

doi:10.1063/1.4902969

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Hee Dong Kim, Min Ju Yun, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

Original language	English
Article number	213510
Journal	Applied Physics Letters
Volume	105
Issue number	21
DOIs	https://doi.org/10.1063/1.4902969
Publication status	Published - 2014 Nov 24

Bibliographical note

Publisher Copyright:
© 2014 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4902969

Cite this

@article{82f102d9d9c54e38acde149b6adb1824,

title = "Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications",

abstract = "In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.",

author = "Kim, {Hee Dong} and Yun, {Min Ju} and Kim, {Tae Geun}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = nov,

day = "24",

doi = "10.1063/1.4902969",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

AU - Kim, Hee Dong

AU - Yun, Min Ju

AU - Kim, Tae Geun

PY - 2014/11/24

Y1 - 2014/11/24

N2 - In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

AB - In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

UR - http://www.scopus.com/inward/record.url?scp=84913534868&partnerID=8YFLogxK

U2 - 10.1063/1.4902969

DO - 10.1063/1.4902969

M3 - Article

AN - SCOPUS:84913534868

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213510

ER -

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this