Abstract
In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.
Original language | English |
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Article number | 213510 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2014 Nov 24 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)