Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Hee Dong Kim; Min Ju Yun; Tae Geun Kim

doi:10.1063/1.4902969

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Hee Dong Kim
, Min Ju Yun
, Tae Geun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

Original language	English
Article number	213510
Journal	Applied Physics Letters
Volume	105
Issue number	21
DOIs	https://doi.org/10.1063/1.4902969
Publication status	Published - 2014 Nov 24

Bibliographical note

Publisher Copyright:
© 2014 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4902969

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title = "Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications",

abstract = "In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.",

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AU - Kim, Hee Dong

AU - Yun, Min Ju

AU - Kim, Tae Geun

PY - 2014/11/24

Y1 - 2014/11/24

N2 - In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

AB - In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity.

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JO - Applied Physics Letters

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IS - 21

M1 - 213510

ER -

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

Abstract

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