Semi-insulating GaN substrates for high-frequency device fabrication

J. A. Freitas, M. Gowda, J. G. Tischler, J. H. Kim, L. Liu, D. Hanser

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.

Original languageEnglish
Pages (from-to)3968-3972
Number of pages5
JournalJournal of Crystal Growth
Issue number17
Publication statusPublished - 2008 Aug 15

Bibliographical note

Funding Information:
Dr. J.-H. Kim was supported by ONR-Global (N00014-06-1-4046) and by Brain Korea 21 program.


  • A1. Characterization
  • A1. Impurities
  • A1. X-ray diffraction
  • A3. Hydride vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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