Semi-insulating GaN substrates for high-frequency device fabrication

J. A. Freitas; M. Gowda; J. G. Tischler; J. H. Kim; L. Liu; D. Hanser

doi:10.1016/j.jcrysgro.2008.06.038

Semi-insulating GaN substrates for high-frequency device fabrication

J. A. Freitas, M. Gowda, J. G. Tischler, J. H. Kim, L. Liu, D. Hanser

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.

Original language	English
Pages (from-to)	3968-3972
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	17
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.06.038
Publication status	Published - 2008 Aug 15

Bibliographical note

Funding Information:
Dr. J.-H. Kim was supported by ONR-Global (N00014-06-1-4046) and by Brain Korea 21 program.

Keywords

A1. Characterization
A1. Impurities
A1. X-ray diffraction
A3. Hydride vapor phase epitaxy
B1. Nitrides
B2. Semiconducting materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.06.038

Cite this

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title = "Semi-insulating GaN substrates for high-frequency device fabrication",

abstract = "Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.",

keywords = "A1. Characterization, A1. Impurities, A1. X-ray diffraction, A3. Hydride vapor phase epitaxy, B1. Nitrides, B2. Semiconducting materials",

author = "Freitas, {J. A.} and M. Gowda and Tischler, {J. G.} and Kim, {J. H.} and L. Liu and D. Hanser",

note = "Funding Information: Dr. J.-H. Kim was supported by ONR-Global (N00014-06-1-4046) and by Brain Korea 21 program.",

year = "2008",

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doi = "10.1016/j.jcrysgro.2008.06.038",

language = "English",

volume = "310",

pages = "3968--3972",

journal = "Journal of Crystal Growth",

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T1 - Semi-insulating GaN substrates for high-frequency device fabrication

AU - Freitas, J. A.

AU - Gowda, M.

AU - Tischler, J. G.

AU - Kim, J. H.

AU - Liu, L.

AU - Hanser, D.

N1 - Funding Information: Dr. J.-H. Kim was supported by ONR-Global (N00014-06-1-4046) and by Brain Korea 21 program.

PY - 2008/8/15

Y1 - 2008/8/15

N2 - Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.

AB - Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology and crystalline quality of the freestanding samples show no evident degradation due to iron doping. Low-temperature photoluminescence measurements show reduction of the exciton-bound to neutral impurities band intensities with iron doping increase. Near-infrared photoluminescence studies confirm the incorporation and activation of iron impurities. Variable temperature resistivity measurements verified that the iron-doped films are semi-insulating.

KW - A1. Characterization

KW - A1. Impurities

KW - A1. X-ray diffraction

KW - A3. Hydride vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting materials

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U2 - 10.1016/j.jcrysgro.2008.06.038

DO - 10.1016/j.jcrysgro.2008.06.038

M3 - Article

AN - SCOPUS:49449096525

SN - 0022-0248

VL - 310

SP - 3968

EP - 3972

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 17

ER -

Semi-insulating GaN substrates for high-frequency device fabrication

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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