Semiconducting π-extended porphyrin dimer and its characteristics in OFET and OPVC

Woo Jea Park; Seung Hyun Chae; Jicheol Shin; Dong Hoon Choi; Suk Joong Lee

doi:10.1016/j.synthmet.2015.04.017

Semiconducting π-extended porphyrin dimer and its characteristics in OFET and OPVC

Woo Jea Park, Seung Hyun Chae, Jicheol Shin, Dong Hoon Choi, Suk Joong Lee

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Porphyrin is considered as one of the best candidates for various organic electronic devices, due to its molecular planarity and π-conjugation. Particularly, for the good performing OFETs based on porphyrin derivatives, they should have high crystallinity and close π-π stacking distance in solid state. However, π-extended dimeric porphyrin has never been introduced as a charge transport layer in OFETs. In this regard, we report here on the design and synthesis of new solution processable semiconducting π-extended porphyrin dimer (PD-1), and its OFET and OPVC characteristics. Due to strong π-π interactions, PD-1 showed high crystallinity in film state which displayed an excellent electrical characteristics with high hole mobility of 0.026 cm²/Vs and high current on-off ratio of >10⁵, when the device was fabricated in the mixed solvents of toluene and THF. This mobility is 1000 times better than that of a device fabricated from a solution either THF or toluene exclusively. Furthermore, the photovoltaic performance of PD-1 device shows a PCE of 0.58%. The effective π-conjugation and molecular planarity of π-extended dimeric porphyrin (PD-1) can lead to significant changes in the electrical characteristics of the devices.

Original language	English
Pages (from-to)	206-211
Number of pages	6
Journal	Synthetic Metals
Volume	205
DOIs	https://doi.org/10.1016/j.synthmet.2015.04.017
Publication status	Published - 2015 Jul

Bibliographical note

Funding Information:
The authors acknowledge the financial supports from the Research Foundation Program ( NRF2013R1A1A2007429 , NRF2012R1A2A1A01008797 and NRF20110020033 ) and Key Research Institute Program ( NRF20100020209 ) through the National Research Foundation of Korea (NRF) funded by the Korea government.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Field-effect transistors
Porphyrins
Semiconductors
Thin films
π-π interactions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.synthmet.2015.04.017

Cite this

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title = "Semiconducting π-extended porphyrin dimer and its characteristics in OFET and OPVC",

abstract = "Porphyrin is considered as one of the best candidates for various organic electronic devices, due to its molecular planarity and π-conjugation. Particularly, for the good performing OFETs based on porphyrin derivatives, they should have high crystallinity and close π-π stacking distance in solid state. However, π-extended dimeric porphyrin has never been introduced as a charge transport layer in OFETs. In this regard, we report here on the design and synthesis of new solution processable semiconducting π-extended porphyrin dimer (PD-1), and its OFET and OPVC characteristics. Due to strong π-π interactions, PD-1 showed high crystallinity in film state which displayed an excellent electrical characteristics with high hole mobility of 0.026 cm2/Vs and high current on-off ratio of >105, when the device was fabricated in the mixed solvents of toluene and THF. This mobility is 1000 times better than that of a device fabricated from a solution either THF or toluene exclusively. Furthermore, the photovoltaic performance of PD-1 device shows a PCE of 0.58%. The effective π-conjugation and molecular planarity of π-extended dimeric porphyrin (PD-1) can lead to significant changes in the electrical characteristics of the devices.",

keywords = "Field-effect transistors, Porphyrins, Semiconductors, Thin films, π-π interactions",

author = "Park, {Woo Jea} and Chae, {Seung Hyun} and Jicheol Shin and Choi, {Dong Hoon} and Lee, {Suk Joong}",

note = "Funding Information: The authors acknowledge the financial supports from the Research Foundation Program ( NRF2013R1A1A2007429 , NRF2012R1A2A1A01008797 and NRF20110020033 ) and Key Research Institute Program ( NRF20100020209 ) through the National Research Foundation of Korea (NRF) funded by the Korea government. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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AU - Chae, Seung Hyun

AU - Shin, Jicheol

AU - Choi, Dong Hoon

AU - Lee, Suk Joong

N1 - Funding Information: The authors acknowledge the financial supports from the Research Foundation Program ( NRF2013R1A1A2007429 , NRF2012R1A2A1A01008797 and NRF20110020033 ) and Key Research Institute Program ( NRF20100020209 ) through the National Research Foundation of Korea (NRF) funded by the Korea government. Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

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AB - Porphyrin is considered as one of the best candidates for various organic electronic devices, due to its molecular planarity and π-conjugation. Particularly, for the good performing OFETs based on porphyrin derivatives, they should have high crystallinity and close π-π stacking distance in solid state. However, π-extended dimeric porphyrin has never been introduced as a charge transport layer in OFETs. In this regard, we report here on the design and synthesis of new solution processable semiconducting π-extended porphyrin dimer (PD-1), and its OFET and OPVC characteristics. Due to strong π-π interactions, PD-1 showed high crystallinity in film state which displayed an excellent electrical characteristics with high hole mobility of 0.026 cm2/Vs and high current on-off ratio of >105, when the device was fabricated in the mixed solvents of toluene and THF. This mobility is 1000 times better than that of a device fabricated from a solution either THF or toluene exclusively. Furthermore, the photovoltaic performance of PD-1 device shows a PCE of 0.58%. The effective π-conjugation and molecular planarity of π-extended dimeric porphyrin (PD-1) can lead to significant changes in the electrical characteristics of the devices.

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Semiconducting π-extended porphyrin dimer and its characteristics in OFET and OPVC

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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