Semiconductor nanowires surrounded by cylindrical Al2O3 shells

Byungdon Min; Jong Soo Lee; Kyoungah Cho; Ju Won Hwang; Hyunsuk Kim; Man Young Sung; Sangsig Kim; Jeunghee Park; Hee Won Seo; Seung Yong Bae; Moon Sook Lee; Soon Oh Park; Joo Tae Moon

doi:10.1007/s11664-003-0034-1

Semiconductor nanowires surrounded by cylindrical Al₂O₃ shells

Byungdon Min, Jong Soo Lee, Kyoungah Cho, Ju Won Hwang, Hyunsuk Kim, Man Young Sung, Sangsig Kim, Jeunghee Park, Hee Won Seo, Seung Yong Bae, Moon Sook Lee, Soon Oh Park, Joo Tae Moon

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The GaN, GaP, InP, Si₃N₄, SiO₂/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous aluminum oxide (Al₂O₃) shells. The Al₂O₃ was deposited on these seven different semiconductor nanowires by atomic layer deposition (ALD) at a substrate temperature of 200°C using trimethylaluminum (TMA) and distilled water (H₂O). Transmission electron microscopy (TEM) images taken for the nanowires revealed that Al₂O₃ cylindrical shells surround uniformly all these semiconductor nanowires. Our TEM study illustrates that the ALD of Al₂O₃ has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al₂O₃ on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire field-effect transistors (FETs).

Original language	English
Pages (from-to)	1344-1348
Number of pages	5
Journal	Journal of Electronic Materials
Volume	32
Issue number	11
DOIs	https://doi.org/10.1007/s11664-003-0034-1
Publication status	Published - 2003 Nov

Bibliographical note

Funding Information:
This work was supported by the Korean Ministry of Science and Technology as a part of the ‘03 Nuclear R&D Program, Grant No. M2-0363-00-0052, and by Grant No. R01–2002–000–00504–0 from the Basic Research Program of the Korea Science & Engineering Foundation and Nano Research and Development Program.

Keywords

AlO shells
Nanowires
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-003-0034-1

Cite this

@article{fda0dfec4e824c0ea1f00f4ae2aeda2b,

title = "Semiconductor nanowires surrounded by cylindrical Al2O3 shells",

abstract = "The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous aluminum oxide (Al2O3) shells. The Al2O3 was deposited on these seven different semiconductor nanowires by atomic layer deposition (ALD) at a substrate temperature of 200°C using trimethylaluminum (TMA) and distilled water (H2O). Transmission electron microscopy (TEM) images taken for the nanowires revealed that Al2O3 cylindrical shells surround uniformly all these semiconductor nanowires. Our TEM study illustrates that the ALD of Al2O3 has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al2O3 on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire field-effect transistors (FETs).",

keywords = "AlO shells, Nanowires, Transmission electron microscopy (TEM)",

author = "Byungdon Min and Lee, {Jong Soo} and Kyoungah Cho and Hwang, {Ju Won} and Hyunsuk Kim and Sung, {Man Young} and Sangsig Kim and Jeunghee Park and Seo, {Hee Won} and Bae, {Seung Yong} and Lee, {Moon Sook} and Park, {Soon Oh} and Moon, {Joo Tae}",

note = "Funding Information: This work was supported by the Korean Ministry of Science and Technology as a part of the {\textquoteleft}03 Nuclear R&D Program, Grant No. M2-0363-00-0052, and by Grant No. R01–2002–000–00504–0 from the Basic Research Program of the Korea Science & Engineering Foundation and Nano Research and Development Program.",

year = "2003",

month = nov,

doi = "10.1007/s11664-003-0034-1",

language = "English",

volume = "32",

pages = "1344--1348",

journal = "Journal of Electronic Materials",

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T1 - Semiconductor nanowires surrounded by cylindrical Al2O3 shells

AU - Min, Byungdon

AU - Lee, Jong Soo

AU - Cho, Kyoungah

AU - Hwang, Ju Won

AU - Kim, Hyunsuk

AU - Sung, Man Young

AU - Kim, Sangsig

AU - Park, Jeunghee

AU - Seo, Hee Won

AU - Bae, Seung Yong

AU - Lee, Moon Sook

AU - Park, Soon Oh

AU - Moon, Joo Tae

N1 - Funding Information: This work was supported by the Korean Ministry of Science and Technology as a part of the ‘03 Nuclear R&D Program, Grant No. M2-0363-00-0052, and by Grant No. R01–2002–000–00504–0 from the Basic Research Program of the Korea Science & Engineering Foundation and Nano Research and Development Program.

PY - 2003/11

Y1 - 2003/11

N2 - The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous aluminum oxide (Al2O3) shells. The Al2O3 was deposited on these seven different semiconductor nanowires by atomic layer deposition (ALD) at a substrate temperature of 200°C using trimethylaluminum (TMA) and distilled water (H2O). Transmission electron microscopy (TEM) images taken for the nanowires revealed that Al2O3 cylindrical shells surround uniformly all these semiconductor nanowires. Our TEM study illustrates that the ALD of Al2O3 has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al2O3 on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire field-effect transistors (FETs).

AB - The GaN, GaP, InP, Si3N4, SiO2/Si, SiC, and ZnO semiconductor nanowires were synthesized by a variety of growth methods, and they were wrapped cylindrically with amorphous aluminum oxide (Al2O3) shells. The Al2O3 was deposited on these seven different semiconductor nanowires by atomic layer deposition (ALD) at a substrate temperature of 200°C using trimethylaluminum (TMA) and distilled water (H2O). Transmission electron microscopy (TEM) images taken for the nanowires revealed that Al2O3 cylindrical shells surround uniformly all these semiconductor nanowires. Our TEM study illustrates that the ALD of Al2O3 has an excellent capability to coat any semiconductor nanowires conformally; its coating capability is independent of the chemical component, lattice structure, and growth direction of the nanowires. This study suggests that the ALD of Al2O3 on nanowires is one of the promising methods to prepare cylindrical dielectric shells in coaxially gated, nanowire field-effect transistors (FETs).

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