Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae Young Jeon; So Jeong Park; Mireille Mouis; Min Kyu Joo; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1063/1.4886139

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Min Kyu Joo, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The error rate of low-field mobility (μ₀) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (N_d) for a typical value of the first order mobility attenuation factor θ₀ ≈0.1 V^-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ_0-acc) and the bulk neutral channel mobility (μ_bulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ_0-acc and μ_bulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.

Original language	English
Article number	263510
Journal	Applied Physics Letters
Volume	104
Issue number	26
DOIs	https://doi.org/10.1063/1.4886139
Publication status	Published - 2014 Jun 30

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0 ≈0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ0-acc) and the bulk neutral channel mobility (μbulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ0-acc and μbulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.",

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AU - Jeon, Dae Young

AU - Jeong Park, So

AU - Mouis, Mireille

AU - Joo, Min Kyu

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014/6/30

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AB - The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0 ≈0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ0-acc) and the bulk neutral channel mobility (μbulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ0-acc and μbulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.

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Separation of surface accumulation and bulk neutral channel in junctionless transistors

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