The error rate of low-field mobility (μ0) extracted from the conventional Y-function method in junctionless transistors (JLTs) is found to be linearly proportional to the channel doping concentration (Nd) for a typical value of the first order mobility attenuation factor θ0 ≈0.1 V-1. Therefore, for a better understanding of their physical operation with higher accuracy, a methodology for the extraction of the low-field mobility of the surface accumulation channel (μ0-acc) and the bulk neutral channel mobility (μbulk) of JLTs is proposed based on their unique operation principle. Interestingly, it is found that the different temperature dependence between μ0-acc and μbulk is also confirming that the distribution of point defects along the channel in the heavily doped Si channel of JLTs was non-uniform.
|Journal||Applied Physics Letters|
|Publication status||Published - 2014 Jun 30|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)