Series resistance in different operation regime of junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.

Original languageEnglish
Pages (from-to)92-95
Number of pages4
JournalSolid-State Electronics
Publication statusPublished - 2018 Mar

Bibliographical note

Funding Information:
This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 , the Korea Institute of Science and Technology (KIST) Institutional Program , the National Research Foundation of Korea ( NRF-2016R1A6A3A11933511 and NRF-2017M3A7B4049167 ) and Korea University Grant .

Publisher Copyright:
© 2018 Elsevier Ltd


  • Accumulation channel
  • Bulk channel
  • Junctionless transistors (JLTs)
  • Numerical simulation and temperature dependence
  • Series resistance (R)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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