Abstract
Operation mode dependent series resistance (Rsd) behavior of junctionless transistors (JLTs) has been discussed in detail. Rsd was increased for decreasing gate bias in bulk conduction regime, while a constant value of Rsd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted Rsd. This work provides key information for a better understanding of JLT operation affected by Rsd effects with different state of conduction channel.
Original language | English |
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Pages (from-to) | 92-95 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 141 |
DOIs | |
Publication status | Published - 2018 Mar |
Bibliographical note
Funding Information:This work was supported by European Union 7th Framework Program project SQWIRE under grant agreements No. 257111 , the Korea Institute of Science and Technology (KIST) Institutional Program , the National Research Foundation of Korea ( NRF-2016R1A6A3A11933511 and NRF-2017M3A7B4049167 ) and Korea University Grant .
Publisher Copyright:
© 2018 Elsevier Ltd
Keywords
- Accumulation channel
- Bulk channel
- Junctionless transistors (JLTs)
- Numerical simulation and temperature dependence
- Series resistance (R)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry