Shielding region effects on a trench gate IGBT

Jong Seok Lee; Ey Goo Kang; Man Young Sung

doi:10.1016/j.mejo.2007.10.023

Shielding region effects on a trench gate IGBT

Jong Seok Lee, Ey Goo Kang, Man Young Sung

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

Original language	English
Pages (from-to)	57-62
Number of pages	6
Journal	Microelectronics Journal
Volume	39
Issue number	1
DOIs	https://doi.org/10.1016/j.mejo.2007.10.023
Publication status	Published - 2008 Jan

Keywords

Breakdown voltage
IGBT
On-state voltage drop
Shielding region
Trench

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2007.10.023

Cite this

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title = "Shielding region effects on a trench gate IGBT",

abstract = "In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.",

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AU - Lee, Jong Seok

AU - Kang, Ey Goo

AU - Sung, Man Young

PY - 2008/1

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N2 - In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

AB - In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT.

KW - Breakdown voltage

KW - IGBT

KW - On-state voltage drop

KW - Shielding region

KW - Trench

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JO - Microelectronics Journal

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Shielding region effects on a trench gate IGBT

Abstract

Keywords

ASJC Scopus subject areas

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