Shubnikov-de haas oscillation and potentiometric methods for spin-orbit interaction parameter measurement in an InAs quantum well

Kyung Ho Kim; Hyun Cheol Koo; Joonyeon Chang; Yun Suk Yang; Hyung Jun Kim

doi:10.1109/TMAG.2013.2283850

Shubnikov-de haas oscillation and potentiometric methods for spin-orbit interaction parameter measurement in an InAs quantum well

Kyung Ho Kim, Hyun Cheol Koo, Joonyeon Chang, Yun Suk Yang, Hyung Jun Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Rashba spin?orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (α) drastically increases from ∼3.5 × 10?12 to ∼6.9 × 10^?12 eV-m as a gate electric field (Vg) decreases from 5 to ?10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal.

Original language	English
Article number	6613513
Pages (from-to)	18-21
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	3
DOIs	https://doi.org/10.1109/TMAG.2013.2283850
Publication status	Published - 2014 Mar

Keywords

Gate voltage dependence
InAs quantum well (QW)
Potentiometry
Spin-orbit interaction (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2013.2283850

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title = "Shubnikov-de haas oscillation and potentiometric methods for spin-orbit interaction parameter measurement in an InAs quantum well",

abstract = "Rashba spin?orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (α) drastically increases from ∼3.5 × 10?12 to ∼6.9 × 10?12 eV-m as a gate electric field (Vg) decreases from 5 to ?10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal.",

keywords = "Gate voltage dependence, InAs quantum well (QW), Potentiometry, Spin-orbit interaction (SOI)",

author = "Kim, {Kyung Ho} and Koo, {Hyun Cheol} and Joonyeon Chang and Yang, {Yun Suk} and Kim, {Hyung Jun}",

year = "2014",

month = mar,

doi = "10.1109/TMAG.2013.2283850",

language = "English",

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T1 - Shubnikov-de haas oscillation and potentiometric methods for spin-orbit interaction parameter measurement in an InAs quantum well

AU - Kim, Kyung Ho

AU - Koo, Hyun Cheol

AU - Chang, Joonyeon

AU - Yang, Yun Suk

AU - Kim, Hyung Jun

PY - 2014/3

Y1 - 2014/3

N2 - Rashba spin?orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (α) drastically increases from ∼3.5 × 10?12 to ∼6.9 × 10?12 eV-m as a gate electric field (Vg) decreases from 5 to ?10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal.

AB - Rashba spin?orbit interaction (SOI) in double-sided-doped InAs quantum well (QW) structures has been investigated by means of Shubnikov-de Haas oscillation and potentiometric measurements. Different doping density in two separate carrier supply layers induces the asymmetric potential gradient of the InAs QW and larger charge concentration on the side of a more heavily doped carrier supply layer. The Rashba SOI parameter (α) drastically increases from ∼3.5 × 10?12 to ∼6.9 × 10?12 eV-m as a gate electric field (Vg) decreases from 5 to ?10 V. On the other hand, different distances between a ferromagnet and the InAs QW effectuate one order of magnitude difference in junction resistance area (RA). This experimental result distinctly reveals the junction RA between a ferromagnet and a semiconductor QW is a crucial factor to obtain a hysteresis loop-like potentiometric signal.

KW - Gate voltage dependence

KW - InAs quantum well (QW)

KW - Potentiometry

KW - Spin-orbit interaction (SOI)

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DO - 10.1109/TMAG.2013.2283850

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JO - IEEE Transactions on Magnetics

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ER -

Shubnikov-de haas oscillation and potentiometric methods for spin-orbit interaction parameter measurement in an InAs quantum well

Abstract

Keywords

ASJC Scopus subject areas

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