Si-based Coulomb blockade device for spin qubit logic gate 023111

S. D. Lee, S. J. Shin, S. J. Choi, J. J. Lee, J. B. Choi, S. Park, S. R. Eric Yang, S. J. Lee, T. H. Zyung

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.

Original languageEnglish
Article number023111
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2006

Bibliographical note

Funding Information:
The authors acknowledge useful discussions with G. Burkard, D.P. Divincenzo, D. Loss, and R. Nieminen. This work was supported by MOST through the Frontier 21 National Program for Tera-level NanoDevices, the Device Technology for Quantum Information, and CKC Project for Nanoelectronics.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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