Abstract
A lateral gate-controlled double dot structure in Si has been fabricated for studying coupled two qubits. Nonequilibrium single-electron tunneling measurements at 1.4 K show that the second Coulomb peak, associated with a two-electron occupation, splits into two side peaks, and that their separation displays a strong magnetic-field dependence for various interdot coupling constants. Moreover, for some fixed magnetic fields, the separation of the side peaks decays exponentially as a function of the interdot coupling. We attribute this behavior to electron spin exchange and spin swapping between singlet and triplet states in the coupled double dot in the presence of a magnetic field.
Original language | English |
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Article number | 023111 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 |
Bibliographical note
Funding Information:The authors acknowledge useful discussions with G. Burkard, D.P. Divincenzo, D. Loss, and R. Nieminen. This work was supported by MOST through the Frontier 21 National Program for Tera-level NanoDevices, the Device Technology for Quantum Information, and CKC Project for Nanoelectronics.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)