Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Jaecheon Sohn, S. H. Han, Masahiro Yamaguchi, S. H. Lim

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.

    Original languageEnglish
    Article number143520
    JournalApplied Physics Letters
    Volume90
    Issue number14
    DOIs
    Publication statusPublished - 2007

    Bibliographical note

    Funding Information:
    This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program funded by the Korean Ministry of Science and Technology (Project No. M10600000198-06J0000-19810).

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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