Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Jaecheon Sohn; S. H. Han; Masahiro Yamaguchi; S. H. Lim

doi:10.1063/1.2719681

Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Jaecheon Sohn, S. H. Han, Masahiro Yamaguchi, S. H. Lim

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.

Original language	English
Article number	143520
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2719681
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program funded by the Korean Ministry of Science and Technology (Project No. M10600000198-06J0000-19810).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2719681

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title = "Si-based electromagnetic noise suppressors integrated with a magnetic thin film",

abstract = "Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.",

author = "Jaecheon Sohn and Han, {S. H.} and Masahiro Yamaguchi and Lim, {S. H.}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program funded by the Korean Ministry of Science and Technology (Project No. M10600000198-06J0000-19810).",

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doi = "10.1063/1.2719681",

language = "English",

volume = "90",

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T1 - Si-based electromagnetic noise suppressors integrated with a magnetic thin film

AU - Sohn, Jaecheon

AU - Han, S. H.

AU - Yamaguchi, Masahiro

AU - Lim, S. H.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory program funded by the Korean Ministry of Science and Technology (Project No. M10600000198-06J0000-19810).

PY - 2007

Y1 - 2007

N2 - Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.

AB - Electromagnetic noise suppressors on Cu transmission lines and oxidized Si substrate integrated with a Si O2 dielectric and a Co-Fe-Al-O magnetic layer are presented. Extremely large signal attenuation is achieved (-90 dB at 20 GHz) while the signal reflection is relatively small, being below -10 dB. These characteristics are attributed to the distributed capacitance (C) formed by the Cu and the oxidized Si substrate and the CuSi O2 Co-Fe-Al-O and the distributed inductance (L) due to the magnetic thin film. The main loss mechanism is the L-C resonance and this emphasizes the role of the magnetic thin film providing the inductance.

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DO - 10.1063/1.2719681

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Si-based electromagnetic noise suppressors integrated with a magnetic thin film

Abstract

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