Si-based Sub-THz heterodyne imaging circuits

Daekeun Yoon; Kiryong Song; Jungsoo Kim; Jae-Sung Rieh

Si-based Sub-THz heterodyne imaging circuits

Daekeun Yoon, Kiryong Song, Jungsoo Kim, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents an analysis to compare the heterodyne detection and the direct detection in terms of their noise performance, particularly for high frequency applications where low noise amplifiers can hardly be employed. The results show that the heterodyne detection provides superior noise performance, especially when a high gain IF amplifier is inserted before the IF detector. To verify the analysis, a sub-THz heterodyne imaging receiver has been developed based on 65-nm Si CMOS technology. It exhibits a noise equivalent temperature (NEP) as low as 0.9 pW/Hz^0.5 in absence of an RF low noise amplifier, experimentally verifying the excellent noise performance expected from the heterodyne detection.

Original language	English
Title of host publication	2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1136-1138
Number of pages	3
ISBN (Electronic)	9784902339314
Publication status	Published - 2014 Mar 25
Event	2014 Asia-Pacific Microwave Conference, APMC 2014 - Sendai, Japan Duration: 2014 Nov 4 → 2014 Nov 7

Other

Other	2014 Asia-Pacific Microwave Conference, APMC 2014
Country/Territory	Japan
City	Sendai
Period	14/11/4 → 14/11/7

Keywords

Heterodyning
Imaging
Silicon

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Cite this

@inproceedings{1ccf9ae71358413b92daba889a57c3d4,

title = "Si-based Sub-THz heterodyne imaging circuits",

abstract = "This paper presents an analysis to compare the heterodyne detection and the direct detection in terms of their noise performance, particularly for high frequency applications where low noise amplifiers can hardly be employed. The results show that the heterodyne detection provides superior noise performance, especially when a high gain IF amplifier is inserted before the IF detector. To verify the analysis, a sub-THz heterodyne imaging receiver has been developed based on 65-nm Si CMOS technology. It exhibits a noise equivalent temperature (NEP) as low as 0.9 pW/Hz0.5 in absence of an RF low noise amplifier, experimentally verifying the excellent noise performance expected from the heterodyne detection.",

keywords = "Heterodyning, Imaging, Silicon",

author = "Daekeun Yoon and Kiryong Song and Jungsoo Kim and Jae-Sung Rieh",

year = "2014",

month = mar,

day = "25",

language = "English",

pages = "1136--1138",

booktitle = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2014 Asia-Pacific Microwave Conference, APMC 2014 ; Conference date: 04-11-2014 Through 07-11-2014",

}

TY - GEN

T1 - Si-based Sub-THz heterodyne imaging circuits

AU - Yoon, Daekeun

AU - Song, Kiryong

AU - Kim, Jungsoo

AU - Rieh, Jae-Sung

PY - 2014/3/25

Y1 - 2014/3/25

N2 - This paper presents an analysis to compare the heterodyne detection and the direct detection in terms of their noise performance, particularly for high frequency applications where low noise amplifiers can hardly be employed. The results show that the heterodyne detection provides superior noise performance, especially when a high gain IF amplifier is inserted before the IF detector. To verify the analysis, a sub-THz heterodyne imaging receiver has been developed based on 65-nm Si CMOS technology. It exhibits a noise equivalent temperature (NEP) as low as 0.9 pW/Hz0.5 in absence of an RF low noise amplifier, experimentally verifying the excellent noise performance expected from the heterodyne detection.

AB - This paper presents an analysis to compare the heterodyne detection and the direct detection in terms of their noise performance, particularly for high frequency applications where low noise amplifiers can hardly be employed. The results show that the heterodyne detection provides superior noise performance, especially when a high gain IF amplifier is inserted before the IF detector. To verify the analysis, a sub-THz heterodyne imaging receiver has been developed based on 65-nm Si CMOS technology. It exhibits a noise equivalent temperature (NEP) as low as 0.9 pW/Hz0.5 in absence of an RF low noise amplifier, experimentally verifying the excellent noise performance expected from the heterodyne detection.

KW - Heterodyning

KW - Imaging

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=84969205005&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84969205005&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84969205005

SP - 1136

EP - 1138

BT - 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Asia-Pacific Microwave Conference, APMC 2014

Y2 - 4 November 2014 through 7 November 2014

ER -

Si-based Sub-THz heterodyne imaging circuits

Abstract

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Keywords

ASJC Scopus subject areas

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