Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

S. J. Park; D. Y. Jeon; L. Montès; S. Barraud; G. T. Kim; G. Ghibaudo

doi:10.1088/0268-1242/28/6/065009

Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

S. J. Park, D. Y. Jeon, L. Montès, S. Barraud, G. T. Kim, G. Ghibaudo

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The sidewall mobility and the series resistance in a multichannel tri-gate MOSFET were examined with low-temperature measurement and 2D numerical simulation. With sidewall mobility separated from total transfer characteristics, it was shown that the sidewall conduction is mainly affected by the surface roughness scattering. The effect of surface roughness scattering on sidewall mobility was evaluated with the mobility degradation factor normalized by the low field mobility, which exhibited an almost six times higher value than that of top surface mobility. The series resistance of the multichannel tri-gate MOSFET was studied by comparing with that of the planar MOSFET. Through 2D numerical simulation, it was revealed that relatively high series resistance of the multichannel tri-gate MOSFET is attributed to the variation of doping concentration in the source/drain extension region in the device.

Original language	English
Article number	065009
Journal	Semiconductor Science and Technology
Volume	28
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/28/6/065009
Publication status	Published - 2013 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/0268-1242/28/6/065009

Cite this

@article{38aba72215874c569327d2e7307481a5,

title = "Sidewall mobility and series resistance in a multichannel tri-gate MOSFET",

abstract = "The sidewall mobility and the series resistance in a multichannel tri-gate MOSFET were examined with low-temperature measurement and 2D numerical simulation. With sidewall mobility separated from total transfer characteristics, it was shown that the sidewall conduction is mainly affected by the surface roughness scattering. The effect of surface roughness scattering on sidewall mobility was evaluated with the mobility degradation factor normalized by the low field mobility, which exhibited an almost six times higher value than that of top surface mobility. The series resistance of the multichannel tri-gate MOSFET was studied by comparing with that of the planar MOSFET. Through 2D numerical simulation, it was revealed that relatively high series resistance of the multichannel tri-gate MOSFET is attributed to the variation of doping concentration in the source/drain extension region in the device.",

author = "Park, {S. J.} and Jeon, {D. Y.} and L. Mont{\`e}s and S. Barraud and Kim, {G. T.} and G. Ghibaudo",

year = "2013",

month = jun,

doi = "10.1088/0268-1242/28/6/065009",

language = "English",

volume = "28",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

AU - Park, S. J.

AU - Jeon, D. Y.

AU - Montès, L.

AU - Barraud, S.

AU - Kim, G. T.

AU - Ghibaudo, G.

PY - 2013/6

Y1 - 2013/6

N2 - The sidewall mobility and the series resistance in a multichannel tri-gate MOSFET were examined with low-temperature measurement and 2D numerical simulation. With sidewall mobility separated from total transfer characteristics, it was shown that the sidewall conduction is mainly affected by the surface roughness scattering. The effect of surface roughness scattering on sidewall mobility was evaluated with the mobility degradation factor normalized by the low field mobility, which exhibited an almost six times higher value than that of top surface mobility. The series resistance of the multichannel tri-gate MOSFET was studied by comparing with that of the planar MOSFET. Through 2D numerical simulation, it was revealed that relatively high series resistance of the multichannel tri-gate MOSFET is attributed to the variation of doping concentration in the source/drain extension region in the device.

AB - The sidewall mobility and the series resistance in a multichannel tri-gate MOSFET were examined with low-temperature measurement and 2D numerical simulation. With sidewall mobility separated from total transfer characteristics, it was shown that the sidewall conduction is mainly affected by the surface roughness scattering. The effect of surface roughness scattering on sidewall mobility was evaluated with the mobility degradation factor normalized by the low field mobility, which exhibited an almost six times higher value than that of top surface mobility. The series resistance of the multichannel tri-gate MOSFET was studied by comparing with that of the planar MOSFET. Through 2D numerical simulation, it was revealed that relatively high series resistance of the multichannel tri-gate MOSFET is attributed to the variation of doping concentration in the source/drain extension region in the device.

UR - http://www.scopus.com/inward/record.url?scp=84879365952&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/28/6/065009

DO - 10.1088/0268-1242/28/6/065009

M3 - Article

AN - SCOPUS:84879365952

SN - 0268-1242

VL - 28

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

M1 - 065009

ER -

Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this